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				Toshiba Semiconductor
Part No.	2SK3759
OCR Text	... DSS V DGR V GSS ID IDP PD EA S iar EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperat...
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS? TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSサ)
File Size	87.05K / 6 Page	View it Online	Download Datasheet

				STMicroelectronics ST Microelectronics
Part No.	STD8NS25 7821
OCR Text	...TjTjMAX (2) Starting T j = 25C, iar = 50A, V DD=20 V July 2001 1/6 STD8NS25 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Pu...
Description	N-CHANNEL 250V - 0.38ohm - 8A DPAK MESH OVERLAY⑩ MOSFET From old datasheet system N-CHANNEL 250V - 0.38ohm - 8A DPAK MESH OVERLAY MOSFET
File Size	121.49K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK3407
OCR Text	...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 450 450 30 10 40 40 222 10 4 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche ...
Description	Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
File Size	218.88K / 6 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	2SK3130
OCR Text	...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 600 600 30 6 24 40 345 6 4 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche en...
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ヰ-MOSV)
File Size	200.65K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor Formosa MS
Part No.	2SK3760
OCR Text	... DSS V DGR V GSS ID IDP PD EA S iar EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 600 600 30 3.5 14 60 6.3 3.5 6 150 -55~150 W mJ A mJ C C Unit V V V A 15.6 max. 15.6 max 2.7 1.5max 1.5 max 0.81 max 0.81 0.45 0.45 2.7 2.54 2.5...
Description	Switching Regulator Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( PIE-MOS6)
File Size	82.62K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK3761
OCR Text	... DSS V DGR V GSS ID IDP PD EA S iar EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 600 600 30 6 24 74 54 6 7.4 150 -55~150 W mJ A mJ C C Unit V V V A 15.6max. 15.6 max 2.7 1.5max 1.5 max 0.81 0.81 max 0.45 0.45 2.7 2.54 2.54 1 2...
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)
File Size	87.69K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK3763
OCR Text	... DSS V DGR V GSS ID IDP PD EA S iar EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 900 900 30 3 9 69 56.7 3 6.9 150 -55~150 W mJ A mJ C C Unit V V 15.6 max. 15.6 max 2.7 1.5max 1.5 max 0.81 0.81 max 0.45 0.45 2.7 2.54 2.5...
Description	Field Effect Transistor Silicon N Channel MOS Type ( pi -MOSIV)
File Size	87.67K / 6 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPP02N80C3 SPA02N80C3
OCR Text	...ol SPP ID 2 1.2 ID puls EAS EAR iar VGS VGS Ptot Tj , Tstg 6 90 0.05 2 20 30 42 Value SPA Unit A 21) 1.21) 6 90 0.05 2 20 30 30.5 W C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=1A, VDD=50V...
Description	Cool MOS Power Transistor Cool MOS Power Transistor Cool MOS& Power Transistor Cool MOS™ Power Transistor for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
File Size	258.86K / 12 Page	View it Online	Download Datasheet

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