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For hidden Found Datasheets File :: 1984 Search Time::1.563ms
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				SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	HYB3165160T-60 HYB3165160T-50 HYB3164160T-60 HYB3164160T-50 64160 HYB3164160T
OCR Text	...efresh (CBR), RAS-only refresh, hidden refresh and self refresh modes Fast page mode capability 2 CAS / 1 WRITE byte control 8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164160T) 4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HY...
Description	From old datasheet system 4M x 16-Bit Dynamic RAM (4k & 8k Refresh)
File Size	365.92K / 26 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TH50VSF2582AASB
OCR Text	...Support for automatic sleep and hidden ROM area Common flash memory interface (CFI) Byte/Word Modes Erase and Program cycles for flash memory 105 cycles (typical) Boot block architecture for flash memory TH50VSF2582AASB: Top boot block TH50...
Description	(TH50VSF2582AASB / TH50VSF2583AASB) SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
File Size	615.33K / 50 Page	View it Online	Download Datasheet

				Elite Semiconductor Memory Technology Inc
Part No.	M10B416256A-50J
OCR Text	... only, CAS BEFORE RAS (CBR) and hidden JEDEC standard pinout Key AC Parameter tRAC -50 -60 50 60 tCAC 13 15 tRC 84 104 tPC 26 29 ORDERING INFORMATION - PACKAGE 40-pin 400mil SOJ 44 / 40-pin 400mil TSOP (TypeII) PRODUCT NO. M10B416256...
Description	256 K x 16 DRAM FAST PAGE MODE
File Size	262.38K / 15 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	LC321664AJ LC321664AM LC321664AT-80
OCR Text	...esh, CAS-before-RAS refresh and hidden refresh settings. There are functions such as page mode, read-modifywrite, and byte-write. Package Dimensions unit: mm 3200-SOJ40 [LC321664AJ] Features * * * * * * * * 65536-word x 16-bit conf...
Description	1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
File Size	959.15K / 30 Page	View it Online	Download Datasheet

				Vanguard International Semiconductor
Part No.	VG2618165DJ-5
OCR Text	... - CAS - before - RAS refresh - hidden refresh - Self-refresh * Refresh interval: - RAS only refresh, CAS - before - RAS refresh and hidden refresh: 1024 cycles in 16 ms - Self-refresh: 1024 cycles * JEDEC standard pinout: 44-pin 400mil SOJ...
Description	DRAM Chip, EDO DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
File Size	327.48K / 26 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-TL60 K4F641612B-TL45 K4F661612B-TL45 K4F641612B-TL50 K4F661612B-TL50
OCR Text	...S refresh, RAS-only refresh and hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width,...
Description	4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
File Size	842.61K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-TL60 K4F641612C-TL45 K4F661612C-TL45 K4F661612C-TL50
OCR Text	...S refresh, RAS-only refresh and hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width,...
Description	4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
File Size	842.92K / 35 Page	View it Online	Download Datasheet

				Powerchip
Part No.	VG2618165
OCR Text	... - CAS - before - RAS refresh - hidden refresh - Self-refresh * Refresh interval: - RAS only refresh, CAS - before - RAS refresh and hidden refresh: 1024 cycles in 16 ms - Self-refresh: 1024 cycles * JEDEC standard pinout: 42-pin 400mil SOJ...
Description	Desc = 1Mx16 5V/3.3V, ACCESSTIME(ns) = 50/60, FEATURES(REFRESH) = Edo (1K)S.R.*, P...
File Size	326.66K / 26 Page	View it Online	Download Datasheet

				Toshiba Semiconductor Toshiba, Corp.
Part No.	TC58FVM7T2 TC58FVM7T2AFT65
OCR Text	...on Automatic Sleep, support for hidden ROM area common flash memory interface (CFI) Byte/Word Modes Block erase architecture 8 x 8 Kbytes/255 x 64 Kbytes Boot block architecture TC58FVM7T2A: top boot block TC58FVM7B2A: bottom boot block Mod...
Description	128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY 128兆位,600 x 8 8米16位）的CMOS闪存
File Size	657.23K / 68 Page	View it Online	Download Datasheet

				Vanguard Microelectronics Limited
Part No.	VG2617405F VG26V17405F
OCR Text	... - CAS - before - RAS refresh - hidden refresh - Self-refresh * Refresh interval: - Self-refresh: 2048 cycles * JEDEC standard pinout: 26/24-pin plastic SOJ and TSOPII. DataSheet4U.com DataShee - RAS only refresh, CAS - before - RA...
Description	CMOS DRAM
File Size	643.13K / 28 Page	View it Online	Download Datasheet

For hidden Found Datasheets File :: 1984 Search Time::1.563ms
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