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RFMD[RF Micro Devices]
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| Part No. |
TA0012
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| OCR Text |
...ons based on revolutionary HBT (heterojunction Bipolar Transistor) technology. This power amplifier operates from a single 4.8V or 6V power supply without the need for a negative voltage. The power output at 4.8V is 35dBm, and at 6V the PA ... |
| Description |
New High Power, High Efficiency HBT GSM Power Amplifier
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| File Size |
73.22K /
4 Page |
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it Online |
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STANFORD[Stanford Microdevices]
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| Part No. |
SCA-3
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| OCR Text |
heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of e... |
| Description |
DC-5 GHZ CASCADABLE GAAS HBT MMIC AMPLIFIER
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| File Size |
554.25K /
6 Page |
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it Online |
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STANFORD[Stanford Microdevices]
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| Part No. |
SCA-14
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| OCR Text |
heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of ... |
| Description |
DC-4 GHz, Cascadable GaAs HBT MMIC Amplifier
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| File Size |
446.85K /
6 Page |
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it Online |
Download Datasheet |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
SBW-5089
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| OCR Text |
heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 8 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage... |
| Description |
DC-8 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
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| File Size |
460.39K /
7 Page |
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it Online |
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RF Micro Devices, Inc.
RFMD[RF Micro Devices]
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| Part No. |
RF2131PCBA RF2131
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| OCR Text |
...on an advanced Gallium Arsenide heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in AMPS and ETACS handheld equipment, spread spectrum systems, CDPD, and other applications in the 800M... |
| Description |
HIGH EFFICIENCY AMPS/ETACS AMPLIFIER 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
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| File Size |
83.72K /
10 Page |
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it Online |
Download Datasheet |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
NGA-586
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| OCR Text |
heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown volta... |
| Description |
DC-5.5 GHZ CASCADABLE IN GAP /GAAS MMIC AMPLIFIER
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| File Size |
400.41K /
5 Page |
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it Online |
Download Datasheet |
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SIRENZA[SIRENZA MICRODEVICES]
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| Part No. |
NGA-486
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| OCR Text |
heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage... |
| Description |
DC-5 GHz, Cascadable InGap/GaAS HBT MMIC Amplifier
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| File Size |
390.08K /
5 Page |
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it Online |
Download Datasheet |
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STANFORD[Stanford Microdevices]
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| Part No. |
NGA-386
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| OCR Text |
heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 5 Ghz. The heterojunction increases breakdown voltage ... |
| Description |
DC-5000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. High gain: 18.9 at 1950MHz.
DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier
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| File Size |
280.38K /
7 Page |
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it Online |
Download Datasheet |
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