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  H55S5132DFR-60M Datasheet PDF File

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    Microsemi, Corp.
Part No. PPF360M
Description N Channel MOSFET; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

File Size 133.29K  /  2 Page

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HUA FENG CIRCUIT





    LA7860 LA7860M

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. LA7860 LA7860M
Description Deflection IC Supports Multisynch Display

File Size 105.28K  /  5 Page

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    RB060MM-40

Rohm
Part No. RB060MM-40
Description Schottky Barrier Diode

File Size 572.05K  /  6 Page

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    RB160MM-60-16

Rohm
Part No. RB160MM-60-16
Description Schottky Barrier Diode

File Size 533.63K  /  9 Page

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    RB160MM-30-16

Rohm
Part No. RB160MM-30-16
Description Schottky Barrier Diode

File Size 532.64K  /  9 Page

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    LA2360M

Sanyo Semicon Device
Part No. LA2360M
Description Monolithic Linear IC CAN Transceiver

File Size 59.71K  /  5 Page

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    AP9960M

Advanced Power Electronics Corp.
Part No. AP9960M
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 82.59K  /  6 Page

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    HY1N60M

HY ELECTRONIC CORP.
Part No. HY1N60M
Description 600V / 1.0A N-Channel Enhancement Mode MOSFET

File Size 159.89K  /  4 Page

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    RB060MM-60

Rohm
Part No. RB060MM-60
Description Schottky Barrier Diode

File Size 510.67K  /  6 Page

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    LA7160M

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. LA7160M
Description VHF Band RF Modulator

File Size 38.03K  /  3 Page

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