| |
|
 |
Motorola, Inc.
|
| Part No. |
MRFG35003MT1
|
| OCR Text |
...ith frequencies from 1.8 to 3.6 ghz. device is unmatched and is suitable for use in class ab linear base station applications. ? typical w?c...2) 0.05 (2) watts w/ c gate?source voltage v gs ?5 vdc rf input power p in 29 dbm storage temperatu... |
| Description |
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
| File Size |
332.98K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
http://
|
| Part No. |
XD1004-BD-000V XD1004-BD-EV1
|
| OCR Text |
ghz gaas mmic distributed amplifier has a small signal gain of 17.0 db with a noise figure of 5.0 db. this mmic uses mimix broadband?s 0...2) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low... |
| Description |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier
|
| File Size |
526.43K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
TriQuint Semiconductor,Inc.
|
| Part No. |
TGF2022-60
|
| OCR Text |
...web: www.triquint.com 1 dc - 20 ghz discrete power phemt tgf2022-60 key features and performance ? frequency range: dc - 2...2.93 x 0.10 mm (0.022 x 0.115 x 0.004 in) primary applications ? point-to-point radio... |
| Description |
DC - 20 GHz Discrete power pHEMT
|
| File Size |
149.77K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
美国讯泰微波有限公司上海代表
|
| Part No. |
HMC496LP3E
|
| OCR Text |
...irect modulator rfic, 4.0 - 7.0 ghz v03.0206 hmc496lp3 / 496lp3e general description features functional diagram the hmc496lp3 & hmc496lp3...2.7v to +3.3v range. wideband rf frequency range high carrier suppression: 34 dbc very low noise flo... |
| Description |
SiGe WIDEBAND DIRECT MODULATOR RFIC, 4.0 - 7.0 GHz
|
| File Size |
475.36K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| Part No. |
FLL810IQ-3C
|
| OCR Text |
ghz i ds = 5.0a pin = 40.0dbm gate-source breakdown voltage v gso -5 - - i gs = -2.2ma v pinch-off voltage -0.1 -0.3 -0.5 v ds = 5v, i ds = 220ma v v p drain current -8- v ds = 5v, v gs = 0v a i dss drain current - 11.5 15.0 a i dsr o... |
| Description |
L-Band High Power GaAs FET
|
| File Size |
124.48K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
