| |
|
 |
CREE[Cree, Inc]
|
| Part No. |
CGH40045
|
| OCR Text |
GaN HEMT
Cree's CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applicatio... |
| Description |
45 W, RF Power GaN HEMT
|
| File Size |
906.44K /
12 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
EUDYNA[Eudyna Devices Inc]
|
| Part No. |
EGN21A180IV
|
| OCR Text |
gan-hemt 180W
Preliminary
FEATURES
High Voltage Operation : VDS=50V High Gain: 15dB(typ.) at Pout=45dBm(Avg.) High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) Broad Frequency Range : 2100 to 2200MHz Proven Reliability
EGN21A180IV
Hig... |
| Description |
High Voltage - High Power gan-hemt
|
| File Size |
230.17K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
EUDYNA[Eudyna Devices Inc]
|
| Part No. |
EGN35A180IV
|
| OCR Text |
gan-hemt 180W
Preliminary
FEATURES
High Voltage Operation : VDS=50V High Power : 53.0dBm (typ.) @ P3dB High Efficiency: 50%(typ.) @ P3dB Linear Gain : 12.0dB(typ.) @ f=3.5GHz Proven Reliability
ES/EGN35A180IV
High Voltage - High Po... |
| Description |
High Voltage - High Power gan-hemt
|
| File Size |
103.92K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
EUDYNA[Eudyna Devices Inc]
|
| Part No. |
ESN26A030MK EGN26A030MK
|
| OCR Text |
gan-hemt 30W
Preliminary
FEATURES
High Voltage Operation : VDS=50V High Power : 46.5dBm (typ.) @ P3dB High Efficiency: 60%(typ.) @ P3dB Linear Gain : 15.0dB(typ.) @ f=2.6GHz Proven Reliability
ES/EGN26A030MK
High Voltage - High Pow... |
| Description |
High Voltage - High Power gan-hemt
|
| File Size |
99.98K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
EUDYNA[Eudyna Devices Inc]
|
| Part No. |
ESN26A090IV
|
| OCR Text |
gan-hemt 90W
Preliminary
FEATURES
High Voltage Operation : VDS=50V High Power : 50.0dBm (typ.) @ P3dB High Efficiency: 55%(typ.) @ P3dB Linear Gain : 14.0dB(typ.) @ f=2.6GHz Proven Reliability
ES/EGN26A090IV
High Voltage - High Pow... |
| Description |
High Voltage - High Power gan-hemt
|
| File Size |
102.49K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
EUDYNA[Eudyna Devices Inc]
|
| Part No. |
ESN26A180IV EGN26A180IV
|
| OCR Text |
gan-hemt 180W
Preliminary
FEATURES
High Voltage Operation : VDS=50V High Power : 53.0dBm (typ.) @ P3dB High Efficiency: 55%(typ.) @ P3dB Linear Gain : 14.0dB(typ.) @ f=2.6GHz Proven Reliability
ES/EGN26A180IV
High Voltage - High Po... |
| Description |
High Voltage - High Power gan-hemt
|
| File Size |
102.59K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
EUDYNA[Eudyna Devices Inc]
|
| Part No. |
ESN35A030MK EGN35A030MK
|
| OCR Text |
gan-hemt 30W
Preliminary
FEATURES
High Voltage Operation : VDS=50V High Power : 46.0dBm (typ.) @ P3dB High Efficiency: 55%(typ.) @ P3dB Linear Gain : 13.0dB(typ.) @ f=3.5GHz Proven Reliability
ES/EGN35A030MK
High Voltage - High Pow... |
| Description |
High Voltage - High Power gan-hemt
|
| File Size |
100.62K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
http://
RFMD[RF Micro Devices]
RF Micro Devices, Inc.
|
| Part No. |
NBB-502-T3T NBB-502 NBB-502-E NBB-502-T1
|
| OCR Text |
...MOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
Package Style: MPGA, Bowtie, 3x3, Ceramic
Features * Reliable, Low-Cost HBT Design * 19.0dB Gain, +13.0dBm P1dB@2GHz * High P1dB of +14.0dBm@6.0GHz * Single Pow... |
| Description |
CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz
|
| File Size |
211.23K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
