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  diode-30v Datasheet PDF File

For diode-30v Found Datasheets File :: 19218    Search Time::1.25ms    
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    2SK3028 2SK3028TENTATIVE

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3028 2SK3028TENTATIVE
OCR Text ...nce Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 30V, ID = 50A VGS = 10V, RL = 0.6 Conditions VDS = 50V, VGS = 0 VGS = 20V, VD...
Description Silicon N-Channel Power F-MOS FET

File Size 24.42K  /  1 Page

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    2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORATION-2SK3029TENTATIVE

Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORATION-2SK3029TENTATIVE
OCR Text ...nce Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 30V, ID = 3A VGS = 10V, RL = 10 Conditions VDS = 80V, VGS = 0 VGS = 20V, VDS ...
Description Silicon N-Channel Power F-MOS FET 5000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset

File Size 23.26K  /  1 Page

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    APT12045L2VR

ADPOW[Advanced Power Technology]
Part No. APT12045L2VR
OCR Text ... Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current Pulsed Source Current 1 Diode Forward Voltage Reverse Recovery Time (IS = -ID[C...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.91K  /  2 Page

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    CS5231-3 CS5231-3GDP5 CS5231-3GDPR5

ZF Electronics, Corp.
CHERRY[Cherry Semiconductor Corporation]
Part No. CS5231-3 CS5231-3GDP5 CS5231-3GDPR5
OCR Text ...VDD C3 33F *indicates PFET body diode M1 +3.3V VAUX C1 33F Application Information Theory of Operation The CS5231-3 is a fixed 3.3V li...30V Figure 2a. Power-up, VAUX = 3.30V. Note the "oscillatory performance" as the linear regulator c...
Description 500mA, 3.3V Linear Regulator with Auxiliary Control 00mA.3V的线性稳压器的辅助控
500mA/ 3.3V Linear Regulator with Auxiliary Control

File Size 279.89K  /  11 Page

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    FCB20N60 FCB20N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FCB20N60 FCB20N60TM
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C (Note 2) (Note 1) (Note 1) (Note 3) ...30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 10A VDS = 40V, ID = 10A VDS ...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 611.95K  /  8 Page

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    FCP20N60 FCPF20N60

Fairchild Semiconductor
Part No. FCP20N60 FCPF20N60
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C (Note 2) (Note 1) (Note 1) (Note 3) ...30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 10A VDS = 40V, ID = 10A VDS ...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 855.17K  /  10 Page

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    FSS140

Sanyo Semicon Device
Part No. FSS140
OCR Text ...e Gate-to-Drain "Miller" Charge Diode Forward Voltage Switching Time Test Circuit 0V --10V VIN VDD= --15V ID= --5A RL=3.0 VIN PW=10s D.C.1% D VOUT G P.G 50 S FSS140 V --8.0V --6.0V --6 ID -- VDS 5V ...
Description Medium Output MOSFETs
Load Switching Applications

File Size 28.44K  /  4 Page

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    H11F1 H11F3 H11F2

FAIRCHILD[Fairchild Semiconductor]
Part No. H11F1 H11F3 H11F2
OCR Text ...Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from t...30V magnitude. MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION CALL V1 H11F1 CALL Vn VIN VOUT ...
Description PHOTO FET OPTOCOUPLERS

File Size 400.71K  /  9 Page

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    HUF76112SK8 FN4834

INTERSIL[Intersil Corporation]
Part No. HUF76112SK8 FN4834
OCR Text ... ns ns ns ns Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage SYMBOL VSD ISD = 7.5A ISD = 4A Reverse Recovery Time Reverse Recovered Charge trr QRR ISD = 7.5A, dISD/dt = 100A/s ISD = 7.5A, dISD/dt = 100A/s TE...
Description From old datasheet system
7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET

File Size 183.81K  /  12 Page

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    HUF76132SK8 HUF76132SK8T

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUF76132SK8 HUF76132SK8T
OCR Text ...y in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications whe...30V * Simulation Models - Temperature Compensated PSPICE(R) and SABERTM Electrical Models - SPICE an...
Description 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 11.5 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA

File Size 259.00K  /  12 Page

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For diode-30v Found Datasheets File :: 19218    Search Time::1.25ms    
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