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    STD2NB50 STD2NB50-1 STD2NB50T4

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STD2NB50 STD2NB50-1 STD2NB50T4
OCR Text ...- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction...
Description N-CHANNEL 500V 5 OHM 1A DPAK/IPAK POWERMESH POWER MOSFET
N-CHANNEL 500V 5 OHM 1A DPAK/IPAK POWERMESH POWER MOSFET
N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh MOSFET
N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh⑩ MOSFET

File Size 450.65K  /  10 Page

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    STD3NC60 STD3NC60-1

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STD3NC60 STD3NC60-1
OCR Text ...- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction...
Description N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh⑩II MOSFET
N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMeshII MOSFET
N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh?II MOSFET

File Size 459.28K  /  10 Page

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    STU26NM60 STU26NM60I

STMICROELECTRONICS
Integrated Device Technology, Inc.
SGS Thomson Microelectronics
Part No. STU26NM60 STU26NM60I
OCR Text ...oltage 30 v i d drain current (continuos) at t c =25 c 30 26 26 (*) a i d drain current (continuos) at t c = 100 c 18.9 16.38 16.38 (*) a i dm ( l ) drain current (pulsed) 120 104 104 (*) a p tot total dissipation at t c =25 c 313 192 7...
Description 26 A, 600 V, 0.135 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 26A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 600V的五(巴西)直|6A条(丁)|20VAR
N-CHANNEL 600V 0.125 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET

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    STP3NB100FP

STMICROELECTRONICS
ST Microelectronics
Part No. STP3NB100FP
OCR Text ...voltage 30 v i d drain current (continuos) at t c = 25c 3 3 (*) a i d drain current (continuos) at t c = 100c 1.9 1.9 (*) a i dm ( s ) drain current (pulsed) 12 12 a p tot total dissipation at t c = 25c 100 35 w derating factor 0.8 0.28...
Description 3 A, 1000 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL 1000V - 5.3 OHM - 3A - TO-220/TO-220FP POWERMESH MOSFET

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    ST Microelectronics
Part No. STGW20NB60K
OCR Text ...age 20 v i c collector current (continuos) at t c = 25c 40 a i c collector current (continuos) at t c = 100c 20 a i cm ( ) collector current (pulsed) 80 a tsc short circuit withstand 10 m s p tot total dissipation at t c = 25c 150 w derat...
Description N-CHANNEL 20A 600V TO-247 SHORT CIRCUIT PROOF POWERMESH IGBT

File Size 279.81K  /  8 Page

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    ST Microelectronics
Part No. STGW20NB60KD
OCR Text ...age 20 v i c collector current (continuos) at t c = 25c 40 a i c collector current (continuos) at t c = 100c 20 a i cm ( ) collector current (pulsed) 80 a tsc short circuit withstand 10 m s p tot total dissipation at t c = 25c 150 w derat...
Description N-CHANNEL 20A 600V TO-247 SHORT CIRCUIT PROOF POWERMESH IGBT

File Size 291.82K  /  9 Page

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    IRF634 IRF634FP

TE Connectivity, Ltd.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. IRF634 IRF634FP
OCR Text ...- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage T...
Description N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAYMOSFET N沟道250V - 0.38ohm - 8A条TO-220/TO-220FP⑩MOSFET的网格密
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY MOSFET
N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET

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    STMicroelectronics N.V.
Part No. STD35NF3LLT4
OCR Text ...oltage 16 v i d drain current (continuos) at t c =25 c 35 a i d drain current (continuos) at t c = 100 c25 a i dm ( ? ) drain current (pulsed) 140 a p tot total dissipation at t c =25 c 50 w derating factor 0.33 w/ c e as (1) single pu...
Description TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 30V的五(巴西)直| 35A条(丁)|52AA

File Size 92.83K  /  8 Page

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    STD4NB40 STD4NB40-1 STD4NB40T4

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STD4NB40 STD4NB40-1 STD4NB40T4
OCR Text ...- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction...
Description N沟道400V - 1.47ohm - 4A条的DPAK /像是iPak PowerMESH⑩MOSFET
N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH⑩ MOSFET
N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH MOSFET
N-CHANNEL 400V 1.47 OHM 4A DPAK/IPAK POWERMESH MOSFET
N-CHANNEL 400V 1.47 OHM 4A DPAK/IPAK POWERMESH MOSFET

File Size 448.33K  /  10 Page

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    MMFTN138

Diotec Semiconductor
Part No. MMFTN138
OCR Text ...tung p tot 360 mw drain current continuos C drainstrom (dc) i d 220 ma peak drain current C drain-spitzenstrom i dm 880 ma junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s 150c -55+150c ? diot...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 109.52K  /  2 Page

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