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NTE[NTE Electronics]
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| Part No. |
RX1800-18
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| OCR Text |
...IN CONTACT: Remove contaminated clothing (including shoes) and wash before reuse. Flush with large amounts of water. Use soap if available. If irritation persists, seek medical attention. INGESTION: Do not induce vomiting unless directed by... |
| Description |
MATERIAL SAFETY DATA SHEET
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| File Size |
109.65K /
6 Page |
 View
it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
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| Part No. |
SSM3J02F
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| OCR Text |
...erators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2003-03-27
SSM3J02F
Electrical Characteristics (Ta = 25C)
Characteri... |
| Description |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
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| File Size |
152.94K /
5 Page |
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it Online |
Download Datasheet |
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM3J02T
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| OCR Text |
...erators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2002-01-17
SSM3J02T
Electrical Characteristics (Ta = 25C)
Characteri... |
| Description |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
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| File Size |
135.95K /
5 Page |
View
it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM3J05FU
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| OCR Text |
...erators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2003-03-27
SSM3J05FU
Electrical Characteristics (Ta = 25C)
Character... |
| Description |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
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| File Size |
172.34K /
5 Page |
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it Online |
Download Datasheet |
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM3J13T
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| OCR Text |
...erators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipat... |
| Description |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
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| File Size |
170.34K /
6 Page |
View
it Online |
Download Datasheet |
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM3J14T
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| OCR Text |
...erators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipat... |
| Description |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC Converters
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| File Size |
174.66K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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