|
|
 |
SEMIWELL[SemiWell Semiconductor]
|
Part No. |
SBW13009
|
Description |
130W bipolar Junction transistor, 12A Ic, 400V Vceo, 700V Vces High Voltage Fast-Switching NPN Power transistor
|
File Size |
745.15K /
6 Page |
View
it Online |
Download Datasheet
|
|
|
 |
CERAMATE TECHNOLOGY CO., Ltd.
|
Part No. |
KE524575HB KD621K20HB
|
Description |
transistor | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 75A I(C) transistor | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 850V V(BR)CEO | 200A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 850V五(巴西)总裁| 200安培我(丙)
|
File Size |
85.83K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |
International Rectifier, Corp. IRF[International Rectifier]
|
Part No. |
IRG4BC40K
|
Description |
Insulated Gate bipolar transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE bipolar transistor(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
File Size |
153.75K /
8 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|