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    FSP2162S09AD FSP2162S10AD FSP2162S12AD FSP2162S15AD FSP2162S18AD FSP2162S25AD FSP2162S285AD FSP2162S28AD FSP2162S30AD FS

FOSLINK SEMICONDUCTOR CO.,LTD
Part No. FSP2162S09AD FSP2162S10AD FSP2162S12AD FSP2162S15AD FSP2162S18AD FSP2162S25AD FSP2162S285AD FSP2162S28AD FSP2162S30AD FSP2162S33AD
OCR Text ...ator is computed as: Where: VI (avg) is the average input voltage. VO(avg) is the average output voltage. IO(avg) is the average output current. I(Q) is the quiescent current. For most LDO regulators, the quiescent current is insignificant ...
Description 1.5A LOW VOLTAGE LOW DROPOUT CMOS REGULATOR

File Size 234.25K  /  11 Page

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    MW6IC2420NBR108 MW6IC2420NBR1

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Freescale Semiconductor, Inc
Part No. MW6IC2420NBR108 MW6IC2420NBR1
OCR Text ... CDMA Application (Pout = 4.5 W avg.) Stage 1, 28 Vdc, IDQ = 210 mA Stage 2, 28 Vdc, IDQ = 370 mA Symbol RJC 1.8 1 Value (2,3) Unit C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machin...
Description RF LDMOS Integrated Power Amplifier

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    FSP2161D12AD FSP2161K09AD FSP2161D285AD FSP2161K18AD FSP2161D30AD FSP2161D33AD FSP2161K30AD FSP2161K25AD FSP2161D09AD FS

FOSLINK SEMICONDUCTOR CO.,LTD
Part No. FSP2161D12AD FSP2161K09AD FSP2161D285AD FSP2161K18AD FSP2161D30AD FSP2161D33AD FSP2161K30AD FSP2161K25AD FSP2161D09AD FSP2161 FSP2161D10AD FSP2161D15AD FSP2161D18AD FSP2161D25AD FSP2161D28AD FSP2161K10AD FSP2161K12AD FSP2161K15AD FSP2161K285AD FSP2161K33AD FSP2161K28AD
OCR Text ...ator is computed as: Where: VI (avg) is the average input voltage. VO(avg) is the average output voltage. IO(avg) is the average output current. I(Q) is the quiescent current. For most LDO regulators, the quiescent current is insignificant ...
Description 1.5A LOW VOLTAGE LOW DROPOUT CMOS REGULATOR

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    MRF21045 MRF21045LR3 MRF21045LSR3

Freescale Semiconductor, Inc
Part No. MRF21045 MRF21045LR3 MRF21045LSR3
OCR Text ...1 - 10 MHz and f2 +10 MHz, Peak/avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power -- 10 Watts avg. Efficiency -- 23.5% Gain -- 15 dB IM3 -- - 37.5 dBc ACPR -- - 41 dBc * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Ou...
Description RF Power Field Effect Transistors

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    MRF21085 MRF21085LR3 MRF21085LSR3

Freescale Semiconductor, Inc
Part No. MRF21085 MRF21085LR3 MRF21085LSR3
OCR Text ... IDQ = 1000 mA, Pout = 19 Watts avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 13.6 dB Drain Efficiency -- 23% IM3 @ 10 MHz Offset -- - 37.5 dBc in 3.84 MHz Channel Ban...
Description RF Power Field Effect Transistors

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    MRFE6S9125NBR1 MRFE6S9125NR1

Freescale Semiconductor, Inc
Part No. MRFE6S9125NBR1 MRFE6S9125NR1
OCR Text ..., IDQ = 950 mA, Pout = 27 Watts avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 20.2 dB Drain Efficiency -- 31% ACPR @ 750 kHz Offs...
Description N-Channel Enhancement-Mode Lateral MOSFETs

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    SAMTEC INC
Part No. SFM-107-T2-L-S
OCR Text ... force: standard= 132g (1,29n) avg.; lif= 90g (0,88n) avg. insertion force (sfm): (single contact only) standard= 2.5oz (0,69n) avg.; lite= 2.0oz (0,56n) avg. lif= 1.4oz (0,39n) avg. withdrawal force (sfm): (single contact only) standa...
Description 7 CONTACT(S), FEMALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT, SOCKET

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    MW7IC2750GNR1 MW7IC2750NBR1 MW7IC2750NR1

Freescale Semiconductor, Inc
Part No. MW7IC2750GNR1 MW7IC2750NBR1 MW7IC2750NR1
OCR Text ..., IDQ2 = 550 mA, Pout = 8 Watts avg., f = 2700 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain -- 26 dB Power Added Efficiency -- 17% Device Output Signal PAR -...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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