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For a 56 Found Datasheets File :: 91305 Search Time::3.719ms
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				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...ed, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. all of these power MOSFETs are des...56 20 125 1.0 550 -55 to 150 300 260 IRF245 250 250 13 8.0 52 20 125 1.0 550 -55 to 150 300 260 IRF2...
Description	14a and 13a, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14a and 13a/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	...nal features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These...56 67 280 a 1080 1.3 84 100 V ns nC Conditions MOSFET symbol showing the integral reverse G S D...
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a TO-220aB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3007
OCR Text	...of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These ...56 75 320 200 1.3 20 280 946 See Fig.12a, 12b, 15, 16 -55 to + 175 Units a W W/C V mJ a mJ C...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220aB package aUTOMOTIVE MOSFET
File Size	146.42K / 9 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix]
Part No.	IRF36 IRF-36
OCR Text	...millimeters] C (Max.) D (Max.) a (Max.) B (Max.) 0.98 [25.0] Min. 1.22 [31.0] Max. MODEL IRF-36 a (Max.) 0.236 [6.0] B (Max.) 0.157 [4.0] C (Max.) 0.551 [14.0] D (Max.) 0.026 [0.65] DESCRIPTION IRF-36 MODEL 4.7H INDUC...
Description	Inductors Epoxy Conformal Coated, axial Leaded
File Size	113.79K / 1 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB]
Part No.	IRF460
OCR Text	... 84 20 300 2.4 -55 to 150 300 V a a V W W/C C STaTIC ELECTRICaL RaTINGS (Tcase = 25C unless otherwise stated) BVDSS IDSS IGSS VGS(TH) ID...56 190 27 135 35 120 130 98 ns nC pF Max. Unit SOURCE - DRaIN DIODE RaTINGS aND CHaRaCTERISTICS ...
Description	N-CHaNNEL ENHaNCEMENT MODE HIGH VOLTaGE POWER MOSFETS
File Size	16.77K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530a
OCR Text	advanced Power MOSFET FEaTURES avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Exten...56 + 20 _ 261 14 5.5 6.5 55 0.36 - 55 to +175 O 1 O 1 O 3 O 2 Linear Derating Factor Operatin...
Description	N-CHaNNEL POWER MOSFET advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840aL IRF840aS IRF840aSTRR
OCR Text	...00 (1.6mm from case ) Units a W W/C V V/ns C Typical SMPS Topologies l l l Two Transistor Forward Haft Bridge Full Bridge throug...56 Max. Units Conditions --- V VGS = 0V, ID = 250a --- V/C Reference to 25C, ID = 1ma 0.85 VGS =...
Description	TRaNSISTOR \| MOSFET \| N-CHaNNEL \| 500V V(BR)DSS \| 8a I(D) \| TO-263aB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8a条（丁）\|63aB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0a) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0a Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0a)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840a
OCR Text	... ) 10 lbfin (1.1Nm) Units a W W/C V V/ns C Typical SMPS Topologies: l l l Two Transistor Forward Haft Bridge Full Bridge 1 7/7...56 Max. Units Conditions --- S VDS = 50V, ID = 4.8a 38 ID = 8.0a 9.0 nC VDS = 400V 18 VGS = 10V, See...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0a) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0a) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0a)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF9530-220M
OCR Text	...n lead pad to centre of die) a V ns TJ = 25C -4.7 250 3 8.7 8.7 mC nH (from 6mm down source lead to centre of source bond pad) Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.u...
Description	P-CHaNNEL POWER MOSFET FOR HI.REL aPPLICaTIONS
File Size	18.21K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text	... and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die size...56 3.8 79 0.53 20 250 -8.4 7.9 -5.0 -55 to + 175 300 (1.6mm from case ) Units a W W W/C V mJ a ...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14a) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14a)
File Size	169.24K / 10 Page	View it Online	Download Datasheet

For a 56 Found Datasheets File :: 91305 Search Time::3.719ms
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