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				Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
Part No.	CY7C1543KV18-400BZC CY7C1545KV18-450BZXI
OCR Text	...y of 2.0 cycles: cy7c1541kv18 ? 8m x 8 cy7c1556kv18 ? 8m x 9 cy7c1543kv18 ? 4m x 18 cy7c1545kv18 ? 2m x 36 functional description the cy7c15...bit words (cy7c1541kv18), 9-bit words (cy7c1556kv18), 18-bit words (cy7c1543kv18), or 36-bit words (...
Description	Sync SRAM; Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165 2M X 36 QDR SRAM, 0.45 ns, PBGA165
File Size	562.79K / 28 Page	View it Online	Download Datasheet

				http:// SIEMENS AG
Part No.	HYB3164805BT-40 HYB3165805BT-40 HYB3165805BJ-40 HYB3164805BJ-40 HYB3165805BTL-50 HYB3164805BJ-60
OCR Text	...hyb 3165805bj/bt(l) -40/-50/-60 8m x 8-bit dynamic ram (4k & 8k refresh, edo-version) premininary information semiconductor group 2 hyb3164(5)805bj/bt(l)-40/-50/-60 8m x 8-dram this hyb3164(5)805b is a 64 mbit dynamic ram organized 8 388 ...
Description	8M x 8-Bit Dynamic RAM 8M X 8 EDO DRAM, 50 ns, PDSO32
File Size	306.96K / 29 Page	View it Online	Download Datasheet

				ELPIDA MEMORY INC
Part No.	UPD45128841G5-A10LI-9JF
OCR Text	... note pd45128441g5-a75i-9jf 8m 4 4 133 54-pin plastic tsop (ii) ambient temperature pd45128441g5-a80i-9jf 125 t a = ?...bit organization. column address is determined by a0 - a9, a11 at the clk rising edge in the read o...
Description	16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
File Size	726.31K / 85 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1515V18-167BZC CY7C1515V18-167BZI CY7C1515V18-167BZXC CY7C1515V18-167BZXI CY7C1515V18-200BZC CY7C1515V18-200BZI CY7C1515V18-200BZXC CY7C1515V18-200BZXI CY7C1515V18-250BZI CY7C1515V18-250BZXC CY7C1515V18-250BZXI CY7C1515V18-278BZC CY7C1515V18-278BZI CY7C1515V18-278BZXC CY7C1515V18-278BZXI CY7C1515V18-300BZC CY7C1515V18-300BZI CY7C1515V18-300BZXC CY7C1515V18-300BZXI
OCR Text	... Configurations CY7C1511V18 - 8M x 8 CY7C1526V18 - 8M x 9 CY7C1513V18 - 4M x 18 CY7C1515V18 - 2M x 36 Selection Guide 300 MHz Maximum ...bit data words. Read operations are initiated by asserting RPS active at the rising edge of the Posi...
Description	72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture
File Size	464.62K / 28 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1561V18 CY7C1561V18-300BZC CY7C1561V18-300BZI CY7C1561V18-300BZXC CY7C1561V18-300BZXI
OCR Text	...cy of 2.5 cycles: CY7C1561V18 - 8M x 8 CY7C1576V18 - 8M x 9 CY7C1563V18 - 4M x 18 CY7C1565V18 - 2M x 36 Separate independent read and wri...bit words (CY7C1561V18), 9-bit words (CY7C1576V18), 18-bit words (CY7C1563V18), or 36-bit words (CY7...
Description	72-Mbit QDR⑩-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
File Size	962.73K / 28 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1550V18-300BZC CY7C1550V18-300BZI CY7C1550V18-300BZXC CY7C1550V18-300BZXI CY7C1550V18-333BZC CY7C1550V18-333BZI CY7C1550V18-333BZXC CY7C1550V18-333BZXI CY7C1550V18-375BZC CY7C1550V18-375BZI CY7C1550V18-375BZXC CY7C1557V18 CY7C1557V18-300BZC
OCR Text	... circuitry. 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36) 300 MHz to 375 MHz clock for high bandwidth 2-Word burst for reducing addr...bit data words. The data presented is latched and written into the device by asserting the appropria...
Description	72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
File Size	954.75K / 27 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1510AV1807
OCR Text	... Configurations CY7C1510AV18 - 8M x 8 CY7C1525AV18 - 8M x 9 CY7C1512AV18 - 4M x 18 CY7C1514AV18 - 2M x 36 Separate independent read and ...bit words (CY7C1510AV18), 9-bit words (CY7C1525AV18), 18-bit words (CY7C1512AV18), or 36-bit words (...
Description	72-Mbit QDR⑩-II SRAM 2-Word Burst Architecture
File Size	409.38K / 28 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K9F6408U0M-TCB0 K9F6408U0M-TIB0
OCR Text	8m x 8 bit nand flash memory revision history the attached datasheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the right to cha nge the specifications. samsung electronics will evaluate and r...
Description	8M x 8 Bit NAND Flash Memory
File Size	483.65K / 26 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K9F6408U0C-V
OCR Text	8m x 8 bit nand flash memory revision history revision no. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 remark advance preliminary history initial issue. 1. i ol (r/b ) of 1.8v device is changed. -min. value: 7ma -->3ma -typ. value: 8ma -->4ma 2...
Description	8M x 8 Bit NAND Flash Memory
File Size	685.31K / 30 Page	View it Online	Download Datasheet

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