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				DYNEX[Dynex Semiconductor]
Part No.	GP800DCS18
OCR Text	... VCE = 900V Rg = 2.2 Ohm EON 700 Tcase = 125C VGE = 15V VCE = 900V IC = 800A EON 300 600 250 Energy - (mJ) EOFF 200 E...1000 Tj = 125C 800 600 400 2000 1800 1600 Collector current, IC - (A) Foward current, IF - ...
Description	Chopper Switch IGBT Module
File Size	169.02K / 10 Page	View it Online	Download Datasheet

				Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
Part No.	GP400LSS18
OCR Text	...ERISTICS Vge = 20/15/12V 800 700 600 Collector current, Ic - (A) Vge = 20/15/12V 800 Common emitter Tcase = 125C Common emitter Tc...1000 td(on) 500 0 0 tr 50 100 150 200 250 300 Collector current, IC - (A) 350 400 Fig.9 Typ...
Description	Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 47uF; Voltage: 160V; Case Size: 16x15 mm; Packaging: Bulk Single Switch IGBT Module
File Size	139.76K / 11 Page	View it Online	Download Datasheet

				Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
Part No.	GP400LSS12
OCR Text	...(OFF) = 3.3 L ~ 100nH Min. Typ. 700 120 60 600 150 35 30 Max. 850 160 80 750 200 75 40 Units ns ns mJ ns ns mJ C Tcase = 125C unless stat...1000 900 800 Switching times, ts - (ns) 700 600 500 400 300 200 td(on) Conditions: Tcase = 125C, VCE...
Description	Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 10uF; Voltage: 160V; Case Size: 18x20 mm; Packaging: Bulk 400 A, 1200 V, N-CHANNEL IGBT Single Switch IGBT Module
File Size	131.54K / 10 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	GP400DDS18
OCR Text	...ERISTICS Vge = 20/15/12V 800 700 600 Collector current, Ic - (A) Vge = 20/15/12V 800 Common emitter Tcase = 125C Common emitter Tc...1000 40 Switching times, ts - (ns) 800 td(on) 30 Tcase = 25C 600 20 400 tf ...
Description	Dual Switch IGBT Module Preliminary Information
File Size	154.43K / 11 Page	View it Online	Download Datasheet

				JRC
Part No.	NJU7601
OCR Text	...illation frequency f osc 300 700 1,000 khz electrical characteristics (v + =3.3v, r t =47k ? , ta=25c) parameter symbol test co...1000 10 100 oscillation frequency f osc (khz) oscillation frequency vs. timing resistance (v + =3...
Description	Switching Regulator IC / DMP8 / TVSP8
File Size	147.67K / 9 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC696LP4E HMC696LP4E08
OCR Text	...) Condition +25 C 200 kHz +1.5V 700 mV 700 mV per tone @ 150 & 250 kHz 30 MHz +5V 0 dBm Single-Ended through LOP Refer to HMC696LP4E Applica...1000 FREQUENCY (MHz) NOISE FLOOR SET-UP NOISE FLOOR Wideband Performance vs. Frequency 10 +25C...
Description	SiGe WIDEBAND DIRECT QUADRATURE MODULATOR, 20 - 2700 MHz
File Size	402.96K / 10 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	GP400DDS12
OCR Text	... CURVES Vge = 20/15/12/10V 800 700 600 Collector current, IC - (A) Vge = 20/15/12/10V 800 Common emitter Tcase = 125C Common emitter...1000 800 600 400 20 15 Tcase = 25C td(on) 10 5 200 tr 0 0 100 200 300 Collecto...
Description	Powerline N-Channel Dual Switch IGBT Module
File Size	97.33K / 10 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	GP400DDM12
OCR Text	... L ~ 100nH Min. Typ. 800 110 65 700 170 45 30 Max. Units ns ns mJ ns ns mJ C Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF ...1000 150 80 800 300 75 65 Max. Units ns ns mJ ns ns mJ C 49 Caution: This device is sensitive ...
Description	Dual Switch IGBT Module Advance Information
File Size	128.92K / 9 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	1N1205A 1N3670A 1N1201A 1N1200A 1N3672A
OCR Text	...0 C 100 (1) 200 300 350 450 600 700 800 (1) (1) (1) (1) (1) (1) (1) VRM, MAXIMUM DIRECT REVERSE VOLTAGE V TC = - 65 C TO 200 C 50 (1) 10...1000 (1) 700 (1) 800 (1) 900 (1) 490 560 630 900 (1) 1000 (1) 1100 (1) 1N3673A 1000 (1) ...
Description	Medium Power Silicon Rectifier Diodes, 12 A
File Size	136.80K / 5 Page	View it Online	Download Datasheet

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