| |
|
 |
NTE[NTE Electronics]
|
| Part No. |
NTE5513 NTE5511 NTE5512
|
| OCR Text |
.... . . . . . . . . . . . . . . . 60a Sub-Cycle Surge (Non-Repetitive, for a period of 1ms to 8.3ms), I2t . . . . . . . . . . . . . . . . . . ...200v VFBO = 400V VFBO = 600V VRBO = 200v VRBO = 400V VRBO = 600V IF = 30A TC = +100C TC = +100C Symb... |
| Description |
Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A.
Silicon Controlled Rectifier (SCR) 5 Amp
|
| File Size |
21.88K /
2 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
FRM9230D FRM9230H FRM9230R FN3263
|
| OCR Text |
...atings from 100V to 500V, 1A to 60a, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with n...200v, VGS = 0 VDS = -160V, VGS = 0 VDS = -160V, VGS = 0, TC = +125oC Time = 20s VGS = -10V, ID = 4A ... |
| Description |
4A/ -200v/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFETs
4A, -200v, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system
|
| File Size |
56.76K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semiconductors
New Jersey Semi-Conduct...
|
| Part No. |
UT4010 UT4005 UT4020 UT2040 UT2060 UT2010 UT2020 UT4060
|
| OCR Text |
...ance 2 amp series ... 2.0a l.oa 60a.... 3 amp series .. 3.0a . ... 1.5a.. 80a -195cto+175c -195-c to +200-c . see lead temperature derating ...200v 400v 600v 50v 100v 200v 400v 600v 50v 100v 200v 400v 600v ? voltage drop 1v@3a 1v@2a 1v@1a maxi... |
| Description |
Standard Recovery, 2 Amp to 4 Amp
Diode Switching 400V 2A 2-Pin Case E
Standard Recovery, 2 Amp to 4 Amp
|
| File Size |
88.27K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
FRK260D FRK260H FRK260R FN3228
|
| OCR Text |
...atings from 100V to 500V, 1A to 60a, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with n...200v, VGS = 0 VDS = 160V, VGS = 0 VDS = 160V, VGS = 0, TC = +125oC Time = 20s VGS = 10V, ID = 46A VG... |
| Description |
46A, 200v, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
From old datasheet system
46A/ 200v/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFETs
|
| File Size |
47.13K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
FRK264D FRK264H FRK264R FN3233
|
| OCR Text |
...atings from 100V to 500V, 1A to 60a, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with n...200v, VGS = 0 VDS = 200v, VGS = 0, TC = +125oC Time = 20s VGS = 10V, ID = 34A VGS = 10V, ID = 21A VD... |
| Description |
34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
34A/ 250V/ 0.120 Ohm/ Rad Hard/ N-Channel Power MOSFETs
|
| File Size |
60.49K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
Fairchild Semiconductor Corporation
|
| Part No. |
SGL30N60RUFD
|
| OCR Text |
...w vge = 15v ic =15a ic =30a ic =60a energy [mj] tc [ & ] 0 20406080 0 200 400 600 800 1000 1200 1400 1600 1800 2000 vcc = 300v ic = 30a esw ...200v i f = 25a tc = 25 & tc = 100 & trr - [ns] -di/dt [a/us] 100 1000 1 10 100 v r = 200v i f =... |
| Description |
CO-PAK IGBT(CO-PAK绝缘栅双极晶体管(IGBT))
|
| File Size |
321.92K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
FRE260R FRE260D FRE260H
|
| OCR Text |
...atings from 100V to 500V, 1A to 60a, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with n...200v, VGS = 0 VDS = 160V, VGS = 0 VDS = 160V, VGS = 0,Tc = +125oC Time = 20s VGS = 10V, ID = 31A VGS... |
| Description |
31A/ 200v/ 0.080 Ohm/ Rad Hard/ N-Channel Power MOSFETs
31A, 200v, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs
|
| File Size |
48.34K /
6 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
