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SemeLAB SEME-LAB[Seme LAB]
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Part No. |
2N6782LCC4
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OCR Text |
... Width 300ms, d 2% 2) @ VDD = 50v , L 570mH , RG = 25W , Peak IL = 14A , Starting TJ = 25C 3) @ ISD 14A , di/dt 140A/ms , VDD BVDSS , ...0.09W/C 68mJ 5.5V/ns -55 to +150C 300C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)145... |
Description |
N-CHANNEL POWER MOSFET
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File Size |
21.20K /
2 Page |
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SGS Thomson Microelectronics
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Part No. |
AN1257
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OCR Text |
..., 1kv c5 100 m f, 25v c6 4.7nf, 50v c7 22nf, 50v c8 470nf, 50v c9, c10, c11 1800 m f, 25v c12, c13, c15 0.1 m f, 50v c14, c17, c18, c19 2.2nf, y, 250v d1 byt11-600 stmicroelectronics d2 1n4148 d3 byw98-200 stmicroelectronics f1 1a, 5x20mm j... |
Description |
VIPER50 DEMO BOARD EMI APPLICATION
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File Size |
75.47K /
8 Page |
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SamHop Microelectronics...
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Part No. |
STT10L01
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OCR Text |
...switching characteristics v dd =50v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay ...0 www.samhop.com.tw aug,05,2010 2 nc q gs nc q gd 1.2 2.6 gate-drain charge gate-source charge v ds ... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
190.93K /
7 Page |
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Kersemi Electronic Co., Ltd...
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Part No. |
IRF7311
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OCR Text |
...t = 25 c j top bottom vgs 7.50v 4.50v 4.00v 3.50v 3.00v 2.70v 2.00v 1.50v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 1.50v 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain volta g e (v) i ... |
Description |
Ultra Low On-Resistance
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File Size |
660.87K /
7 Page |
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it Online |
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Price and Availability
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