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				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT5014B2LC APT5014LLC APT5014
OCR Text	...ps 500 37 0.140 25 250 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) rev- 11-99 1.01 (.040) 1.40 (.055) 2...
Description	POWER MOS VI 500V 37A 0.140 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	34.16K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5014LVR
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5581 Rev A Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Ze...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Drain Source 0.48 (.019) 0.84 (...
Description	POWER MOS V 500V 37A 0.140 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.64K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50GF120B2R APT50GF120LR
OCR Text	...= 700A, Tj = 25C) 1200 -15 4.5 5.5 2.9 3.5 6.5 3.4 4.1 0.5 TBD 100 mA nA 052-6216 RevA Volts Collector-Emitter On Voltage (VGE = ...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) Gate Collector Emitter Gate Collecto...
Description	The Fast IGBT is a new generation of high voltage power IGBTs. 该快速IGBT是一种高压IGBT的新一代 Fast IGBT 1200V 80A
File Size	37.28K / 3 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50L2FLL
OCR Text	... 500 89 0.050 250 1000 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[C...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 050-7115 Rev- 9-2001 Gate Drain Sour...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	52.74K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50L2LL
OCR Text	...s 500 87 0.050 100 500 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[C...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 050-7043 Rev- 5-2001 Gate Drain Sour...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	50.41K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60L2VFR
OCR Text	...ate Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5989 rev- 2-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = ...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 050-5989 rev- 2-2001 Gate Drain Sour...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.66K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60L2VR
OCR Text	... FO AD IN 500 77 308 30 40 825 5.0 -55 to 150 300 77 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3200 STATI...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 050-5986 rev- 11-2000 Gate Drain Sou...
Description	POWER MOS V 500V 77A 0.060 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	33.79K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M65 APT50M65B2FLL APT50M65LFLL
OCR Text	... OR DV NF A I 67 268 30 40 690 5.5 300 67 50 (Repetitive and Non-Repetitive) 1 4 500 Volts Watts W/C C Amps mJ -55 to 150 300...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.95K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8014L2FLL
OCR Text	... 800 52 0.140 250 1000 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[C...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 050-7104 Rev- 9-2001 Gate Drain Sour...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	52.75K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8014L2LL
OCR Text	...s 800 52 0.140 100 500 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[C...106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 050-7103 Rev- 9-2001 Gate Drain Sour...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	51.58K / 2 Page	View it Online	Download Datasheet

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