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  400v s Datasheet PDF File

For 400v s Found Datasheets File :: 10382    Search Time::1.109ms    
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    意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. sTP5NK50ZFP B5NK50Z D5NK50Z P5NK50Z P5NK50ZFP sTB5BK50Z-1 sTB5NK50Z-1 sTD5NK50Z sTD5NK50Z-1 sTP5NK50Z
OCR Text ... pF pF VGs = 0V, VDs = 0V to 400v sWITCHING ON symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 250 V, ID = 2.2 A RG = 4.7 VGs = 10 ...s VDD = 30V, Tj = 150C (see test circuit, Figure 5) 310 1425 9.2 Test Conditions Min. Typ. Max. 4.4 ...
Description N-CHANNEL500V-1.22W-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected superMEsH Power MOsFET

File Size 444.53K  /  14 Page

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    AOK15B60D

Alpha & Omega Semiconductors
Part No. AOK15B60D
OCR Text ...anding time v ge = 15v, v ce 400v, delay between short circuits 1.0s, t c =150c junction and storage temperature range t c =25c therma...s c ies - 1290 - pf c oes - 97 - pf c res - 3.1 - pf q g - 25.4 - nc q ge - 9.5 - nc q gc - 8.3 - nc...
Description 600V, 15A Alpha IGBT with Diode

File Size 655.07K  /  9 Page

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    APT100GF60JU2

Advanced Power Technology
Part No. APT100GF60JU2
OCR Text ...g (25c) v ge = 15v v bus = 400v i c = 100a r g = 5 2.85 mj t d(on) turn-on delay time 26 t r rise time 25 t d...s t j = 25c 23 t j = 25c 85 t rr reverse recovery time t j = 125c 160 ns t...
Description Boost Chopper - IGBT

File Size 445.36K  /  9 Page

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    STMicroelectronics N.V.
Part No. sTP12NM50N
OCR Text ...ode recovery voltage slope vdd=400v, id=11a, vgs=10v 44 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds ...s, v dd =100v, tj=25c 340 3.5 20 ns c a t rr q rr i rrm reverse recovery time reverse recovery charg...
Description N-channel 500V - 0.29- 11A - TO-220 /FP- D2PAK - DPAK second generation MDmeshPower MOsFET N沟道500V - 0.291A20 /计划生育,采用D2PAK - DPAK封装⑩第二代MDmesh功率MOsFET

File Size 476.12K  /  18 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. sTP9NK50Z_04 sTB9NK50Z sTP9NK50Z sTP9NK50ZFP
OCR Text ... pF pF VGs = 0V, VDs = 0V to 400v sWITCHING ON symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 250 V, ID = 3.6 A RG = 4.7 VGs = 10 ...s VDD = 40 V, Tj = 150C (see test circuit, Figure 5) 238 1.5 12.6 Test Conditions Min. Typ. Max. 7.2...
Description N-CHANNEL 500V - 0.72W - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected superMEsH⑩ Power MOsFET

File Size 577.13K  /  13 Page

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    SD300C04C12

Vishay Siliconix
Part No. sD300C04C12
OCR Text ...th j-hs sd 30 0c ..c se rie s (400v to 20 00v ) 20 40 60 80 100 120 140 160 180 0 10 0 20 0 3 00 40 0 50 0 600 70 0 30 60 90 180 dc 120 average forw ard current (a) maximum allowable heatsink temperature (c) conduction period (single si...
Description standard Recovery Diodes (Hockey PUK Version), 650 A

File Size 147.47K  /  7 Page

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    AOK20S60

Alpha & Omega Semiconductors
Part No. AOK20s60
OCR Text ...9 w q g,typ 20nc e oss @ 400v 4.9 m j 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aok20s...s rev 0: jan 2012 www.aosmd.com page 1 of 6 aok20s60 symbol min...
Description 600V 20A a MOs Power Transistor

File Size 248.28K  /  6 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. sTTA106RL -sTTA106RL
OCR Text ...=-50A/s VR = 30V Tj = 125C VR = 400v dIF/dt = -8 A/s dIF/dt = -50 A/s Tj = 125C VR = 400v dIF/dt = -50 A/s IF = 1A 0.6 1.6 IF =1A 1.1 / Min Typ 20 50 A Max Unit ns IRM s factor TURN-ON sWITCHING symbol tfr VFp Parameter Forward rec...
Description TURBOsWITCH a ULTRA-FAsT HIGH VOLTAGE DIODE

File Size 96.71K  /  8 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOK22N50
OCR Text ...ters parameter conditions v ds =400v, t j =125c zero gate voltage drain current v ds =500v, v gs =0v m a bv dss v gs =10v, i d =11a reverse ...s =1a,v gs =0v v ds =40v, i d =11a forward transconductance v drain-source breakdown voltage i d =25...
Description 500V,22A N-Channel MOsFET

File Size 482.49K  /  5 Page

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    AOK22N50

Alpha & Omega Semiconductors
Part No. AOK22N50
OCR Text ...ters parameter conditions v ds =400v, t j =125c zero gate voltage drain current v ds =500v, v gs =0v m a bv dss v gs =10v, i d =11a reverse ...s =1a,v gs =0v v ds =40v, i d =11a forward transconductance v drain-source breakdown voltage i d =25...
Description 500V,22A N-Channel MOsFET

File Size 432.83K  /  5 Page

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