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STMicroelectronics N.V.
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Part No. |
sTP12NM50N
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OCR Text |
...ode recovery voltage slope vdd=400v, id=11a, vgs=10v 44 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds ...s, v dd =100v, tj=25c 340 3.5 20 ns c a t rr q rr i rrm reverse recovery time reverse recovery charg... |
Description |
N-channel 500V - 0.29- 11A - TO-220 /FP- D2PAK - DPAK second generation MDmeshPower MOsFET N沟道500V - 0.291A20 /计划生育,采用D2PAK - DPAK封装⑩第二代MDmesh功率MOsFET
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File Size |
476.12K /
18 Page |
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STMICROELECTRONICS[STMicroelectronics]
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Part No. |
sTP9NK50Z_04 sTB9NK50Z sTP9NK50Z sTP9NK50ZFP
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OCR Text |
... pF pF
VGs = 0V, VDs = 0V to 400v
sWITCHING ON
symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 250 V, ID = 3.6 A RG = 4.7 VGs = 10 ...s VDD = 40 V, Tj = 150C (see test circuit, Figure 5) 238 1.5 12.6 Test Conditions Min. Typ. Max. 7.2... |
Description |
N-CHANNEL 500V - 0.72W - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected superMEsH⑩ Power MOsFET
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File Size |
577.13K /
13 Page |
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STMICROELECTRONICS[STMicroelectronics]
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Part No. |
sTTA106RL -sTTA106RL
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OCR Text |
...=-50A/s VR = 30V Tj = 125C VR = 400v dIF/dt = -8 A/s dIF/dt = -50 A/s Tj = 125C VR = 400v dIF/dt = -50 A/s IF = 1A 0.6 1.6 IF =1A 1.1 / Min Typ 20 50 A Max Unit ns
IRM
s factor
TURN-ON sWITCHING symbol tfr VFp Parameter Forward rec... |
Description |
TURBOsWITCH a ULTRA-FAsT HIGH VOLTAGE DIODE
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File Size |
96.71K /
8 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AOK22N50
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OCR Text |
...ters parameter conditions v ds =400v, t j =125c zero gate voltage drain current v ds =500v, v gs =0v m a bv dss v gs =10v, i d =11a reverse ...s =1a,v gs =0v v ds =40v, i d =11a forward transconductance v drain-source breakdown voltage i d =25... |
Description |
500V,22A N-Channel MOsFET
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File Size |
482.49K /
5 Page |
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it Online |
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Price and Availability
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