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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM6472-8UL
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| OCR Text |
....2 2.6 0.6 2.6 80
f = 6.4 to 7.2GHz
add
IM3
dBc A C
Recommended gate resistance(Rg) : Rg= 150 (MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gat... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
44.02K /
4 Page |
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it Online |
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SANYO
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| Part No. |
2SC5666
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| OCR Text |
... : collector sanyo : smcp 0.8 0.4 0.4 2 3 1.6 0.2 1.6 0.3 0.5 1 0.5 0.75 0.6 0 to 0.1 0.1 0.1max uhf to s band low-noise amplifier and osc a...2ghz 7.0 8.5 db ? s21e ? 2 2v ce =3v, i c =20ma, f=2ghz 9.0 10.5 db noise figure nf v ce =1v, i c =3... |
| Description |
Ultrahigh-Frequency Transistors
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| File Size |
36.69K /
7 Page |
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it Online |
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TOSHIBA
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| Part No. |
MT3S36FS
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| OCR Text |
...llector-emitter voltage v ceo 4.5 v emitter-base voltage v ebo 1.5 v collector-current i c 36 ma base-current i b 18 ma collecto...2ghz 15 19 - ghz |s21e| 2 (1) v ce =3v, i c =15ma, f=1ghz 15 17.5 - db insertion gain |s21... |
| Description |
TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
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| File Size |
115.90K /
4 Page |
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it Online |
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TOSHIBA
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| Part No. |
MT3S31T
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| OCR Text |
...collector-emitter voltage v ceo 4.5 v emitter-base voltage v ebo 1.5 v collector-current i c 24 ma bas e current i b 12 ma collector pow...2ghz 8.5 12.5 - db nf(1) vce=3v, ic=4ma, f=1ghz - 1.0 - db nf(2) vce=3v, ic=4ma, f=2ghz - 1.3 2.0 db... |
| Description |
RF Bipolar Transistors
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| File Size |
146.81K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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