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MP2351 SC1211VX BPR58CF 2SC40 0027DT ON1961 60000 1137B
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  4 8-bit Datasheet PDF File

For 4 8-bit Found Datasheets File :: 105696    Search Time::4.891ms    
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    Mitsubishi Electric, Corp.
Part No. M2V56S40TP-8
OCR Text ...chronous dram 1 m2v56s20tp is a 4-bank x 16777216-word x 4-bit, m2v56s30tp is a 4-bank x 8388608-word x 8-bit, m2v56s40tp is a 4-bank x 4194304-word x 16-bit, synchronous dram, with lvttl interface. all inputs and outputs are referenced t...
Description 256M Synchronous DRAM 256M同步DRAM

File Size 252.86K  /  49 Page

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    HYE25L128800AC-8 HYB25L128800AC-7.5

Infineon Technologies AG
Part No. HYE25L128800AC-8 HYB25L128800AC-7.5
OCR Text 4.01 the hyb/e 25l128800/160ac mobile rams are new generation of low power, four bank synchronous dram?s organized as 4 banks 2mbit x16 and 4 banks x 4mbit x 8 with additional features for mobile applications. these synchronous mobile rams...
Description 16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA54 9 X 8 MM, FBGA-54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA54

File Size 403.51K  /  51 Page

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    HYB39S64160ETL-8 HYB39S64400ETL-8 HYB39S64400ETL-7.5 HYB39S64800ETL-7.5 HYB39S64800ETL-8

Infineon Technologies AG
Part No. HYB39S64160ETL-8 HYB39S64400ETL-8 HYB39S64400ETL-7.5 HYB39S64800ETL-7.5 HYB39S64800ETL-8
OCR Text ...m?s organized as 4banks 4mbit 4, 4 banks 2mbit 8 and 4 banks 1mbit 16 respectively. these synchron- ous devices achieve high speed data transfer rates by employing a chip architecture that prefects multiple bits and then synchronizes ...
Description 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
16M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
16M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54

File Size 371.32K  /  55 Page

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    HS1-82C37ARH-8 HS1-82C37ARH-Q HS9-82C37ARH-Q HS1-82C37ARH HS-82C37ARH HS9-82C37ARH HS9-82C37ARH-8

INTERSIL[Intersil Corporation]
Part No. HS1-82C37ARH-8 HS1-82C37ARH-Q HS9-82C37ARH-Q HS1-82C37ARH HS-82C37ARH HS9-82C37ARH HS9-82C37ARH-8
OCR Text ...- IDDSB = 50A Maximum - IDDOP = 4.0mA/MHz Maximum * Pin Compatible with NMOS 8237A and the Intersil 82C37A * High Speed Data Transfers Up To...8 HS1-82C37ARH-Sample HS9-82C37ARH-Q HS9-82C37ARH-8 HS9-82C37ARH/Sample TEMPERATURE RANGE -55oC to +...
Description Radiation Hardened CMOS High Performance Programmable DMA Controller

File Size 194.38K  /  29 Page

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    Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
Part No. M2V56S20ATP-8 M2V56S30ATP-8 M2V56S40ATP-8
OCR Text ...chronous dram 1 m2v56s20tp is a 4-bank x 16777216-word x 4-bit, m2v56s30tp is a 4-bank x 8388608-word x 8-bit, m2v56s40tp is a 4-bank x 4194304-word x 16-bit, synchronous dram, with lvttl interface. all inputs and outputs are referenced t...
Description 256M Synchronous DRAM 256M同步DRAM

File Size 238.67K  /  49 Page

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    KM4132G271BTQ-8 KM4132G271BTQ_R-8 KM4132G271B KM4132G271BQ_R-10 KM4132G271BQ_R-7 KM4132G271BQ_R-8 KM4132G271BTQ_R-10 KM4

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM4132G271BTQ-8 KM4132G271BTQ_R-8 KM4132G271B KM4132G271BQ_R-10 KM4132G271BQ_R-7 KM4132G271BQ_R-8 KM4132G271BTQ_R-10 KM4132G271BTQ_R-7 KM4132G271BTQR-10 KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-7 KM4132G271BQR-10
OCR Text 4 May 1998 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 2.4 (May 1998) KM...8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going ...
Description 128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL

File Size 1,032.84K  /  51 Page

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    M2V56S20ATP-8 M2V56S20TP M2V56S30ATP-8 M2V56S40ATP-8 M2V56S20ATP-6 M2V56S20ATP-7 M2V56S30ATP-7 M2V56S40ATP-6 M2V56S40ATP

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M2V56S20ATP-8 M2V56S20TP M2V56S30ATP-8 M2V56S40ATP-8 M2V56S20ATP-6 M2V56S20ATP-7 M2V56S30ATP-7 M2V56S40ATP-6 M2V56S40ATP-7
OCR Text ... DESCRIPTION M2V56S20TP is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to ...
Description 256M Synchronous DRAM

File Size 264.65K  /  49 Page

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    Mitsubishi Electric Corporation
Part No. MH16S72BDFA-8 MH16S72BDFA-7
OCR Text ...een industry standard 16m x 4 synchronous drams in tsop. the tsop on a card edge dual in-line package provides any application whe...8/full page(programmable) burst write / single write(programmable) auto precharge / all bank prechar...
Description 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 1,153.28K  /  56 Page

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    Mitsubishi Electric Corporation
Part No. MH16S72DDFA-8 MH16S72DDFA-7
OCR Text ...een industry standard 16m x 4 synchronous drams in tsop. the tsop on a card edge dual in-line package provides any application whe...8/full page(programmable) burst write / single write(programmable) auto precharge / all bank prechar...
Description 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 998.31K  /  56 Page

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    Mitsubishi Electric Corporation
Part No. MH32S72BBFA-8 MH32S72BBFA-7
OCR Text ...tilizes industry standard 16m x 4 synchronous drams in tsop package , industry standard resister in tssop package , and industry standard...8/full page (programmable) burst type sequential / interleave (programmable) column access random bu...
Description 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 1,007.58K  /  56 Page

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