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  30v s Datasheet PDF File

For 30v s Found Datasheets File :: 34967    Search Time::3.641ms    
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    Wuxi NCE Power Semicond...
Part No. NCE6050KA
OCR Text ...sfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 120 - pf switching characteristics (note 4) turn-on delay time t d(on) ...s =20a - 1.2 v diode forward current (note 2) i s - - 50 a reverse recovery time t ...
Description NCE N-Channel Enhancement Mode Power MOsFET

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    Wuxi NCE Power Semicond...
Part No. NCE6050I
OCR Text ...rn-off fall time t f v dd =30v,i d =2a,r l =15 ? v gs =10v,r g =2.5 ? - 6 - ns total gate charge q g - 30 nc gate-sourc...s =40a - 1.2 v diode forward current (note 2) i s - - 50 a reverse recovery time t ...
Description NCE N-Channel Enhancement Mode Power MOsFET

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    Wuxi NCE Power Semicond...
Part No. NCE603s
OCR Text ...sfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 27 - pf switching characteristics (note 4) turn-on delay time t d(on) -...s =6a - 1.2 v diode forward current (note 2) i s - - 6 a reverse recovery time t rr...
Description NCE 60V Complementary MOsFET

File Size 418.54K  /  10 Page

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    Wuxi NCE Power Semicond...
Part No. NCE6020L
OCR Text ...sfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 25 - pf switching characteristics (note 4) turn-on delay time t d(on) -...s =20a - 1.2 v diode forward current (note 2) i s - - 20 a reverse recovery time t ...
Description NCE N-Channel Enhancement Mode Power MOsFET

File Size 411.40K  /  7 Page

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    Wuxi NCE Power Semicond...
Part No. NCE6020K
OCR Text ...sfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 25 - pf switching characteristics (note 4) turn-on delay time t d(on) -...s =20a - 1.2 v diode forward current (note 2) i s - - 20 a reverse recovery time t ...
Description NCE N-Channel Enhancement Mode Power MOsFET

File Size 531.69K  /  7 Page

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    ENA1202A

Sanyo Semicon Device
Part No. ENA1202A
OCR Text ...see specified Test Circuit. VDs=30v, VGs=4V, ID=600mA VDs=30v, VGs=4V, ID=600mA VDs=30v, VGs=4V, ID=600mA Is=600mA, VGs=0V Ratings min typ 3...s 1 2 3 1 : Drain 2 : Drain 3 : Gate 4 : source 5 : Drain 6 : Drain sANYO : MCPH6 0.0...
Description P-Channel silicon MOsFET General-Purpose switching Device Applications

File Size 49.88K  /  4 Page

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    FDMS5352

Fairchild Semiconductor
Part No. FDMs5352
OCR Text ...pacitance Gate Resistance VDs = 30v, VGs = 0V, f = 1MHz f = 1MHz 5220 410 225 1.3 6940 545 335 pF pF pF switching Characteristics td(on...s NOTEs: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1....
Description N-Channel Power Trench? MOsFET 60V, 49A, 6.7mΩ
N-Channel Power Trench㈢ MOsFET 60V, 49A, 6.7mヘ

File Size 278.25K  /  7 Page

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    Wuxi NCE Power Semicond...
Part No. NCE6020I
OCR Text ...sfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 25 - pf switching characteristics (note 4) turn-on delay time t d(on) -...s =20a - 1.2 v diode forward current (note 2) i s - - 20 a reverse recovery time t ...
Description NCE N-Channel Enhancement Mode Power MOsFET

File Size 407.74K  /  7 Page

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    2SC3187

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2sC3187
OCR Text ... 30mA IC = 30mA, IB = 3mA VCB = 30v, IE = -20mA, f = 200MHz VCB = 30v, IE = 0, f = 1MHz 70 140 1.9 min 300 300 7 50 250 1.2 1.5 V V MHz pF typ max Unit V V V 1 Transistor PC -- Ta 1.0 120 Ta=25C IB=2.0mA 1.6mA 1.2mA 1.0mA 0.8mA 0.6m...
Description - Continuousshort Circuit Protection ( /P-suffix)
silicon NPN triple diffusion planer type(For small TV video output)

File Size 35.33K  /  2 Page

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    Wuxi NCE Power Semicond...
Part No. NCE6020AK
OCR Text ...sfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 25 - pf switching characteristics (note 4) turn-on delay time t d(on) -...s =20a - 1.2 v diode forward current (note 2) i s - - 20 a reverse recovery time t ...
Description NCE N-Channel Enhancement Mode Power MOsFET

File Size 420.95K  /  7 Page

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For 30v s Found Datasheets File :: 34967    Search Time::3.641ms    
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