Description |
Speed: 200 ns, Low voltage cmos 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage cmos 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage cmos 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage cmos 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage cmos. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage cmos. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage cmos. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage cmos. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
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