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Vishay
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| Part No. |
SST309 J310 70237
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| OCR Text |
...2.5 to -6
V(BR)GSS Min (V)
-25 -25 -25 -25 -25 -25 -25 -25
gfs Min (mS)
8 10 8 8 10 8 10 10
IDSS Min (mA)
Features
D Excellen...18
-0.4 V -0.8 V -1.2 V -1.6 V
12
6
-2.0 V -2.4 V 0.4 0.6 0.8 1
VDS - Drain-Source Vo... |
| Description |
N-Channel JFETs
From old datasheet system
|
| File Size |
96.21K /
7 Page |
 View
it Online |
Download Datasheet
|
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|
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panasonic
|
| Part No. |
AN8806SB
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| OCR Text |
... 0.2 + 0.05 -
0.10.1
1.30.25 2.850.2
0.5
8.40.3 11.930.3
36-lead SSOP package (SSOP036-P-0450A)
1.30.25
15.20.2
AN88...18
34
F Subtraction -+
- +
+ -
20 VREF
PDER VCBA - + + -
32
21 LD OFF -+ -+ ... |
| Description |
|
| File Size |
98.79K /
11 Page |
View
it Online |
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| |
|
|
Motorola
|
| Part No. |
MHL19926
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| OCR Text |
...C 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 7.37 BSC 9.91 BSC 0.2 0.33 3 3.35 13.59 14.1 11.3 11.81 2.29 BSC INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.99... |
| Description |
1930–1990 MHz, 10 W, 29.4 dB PCS Band RF Linear LDMOS Amplifier
|
| File Size |
67.06K /
2 Page |
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it Online |
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|
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VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| Part No. |
72173 SI7501DN
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| OCR Text |
...
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
P-Channel Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain...18 24 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Ga... |
| Description |
Complementary 30-V (D-S) MOSFET
|
| File Size |
84.07K /
8 Page |
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it Online |
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| |
|
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
SI4565DY 73224
|
| OCR Text |
...
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain...18 13 0.75 -0.79 1.2 -1.2 0.040 0.054 0.045 0.072 S V W 0.6 -0.8 40 -40 -3.8 3.4 "100 "100 1 -1 10 -... |
| Description |
N- and P-Channel 40-V (D-S) MOSFET
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| File Size |
85.08K /
8 Page |
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it Online |
Download Datasheet |
| |
|
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http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
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| Part No. |
BUZ101SL-4
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| OCR Text |
...it A
ID IDpuls
16.4
TA = 25 C
Pulsed drain current one channel active
TA = 25 C
Avalanche energy, single pulse
EAS
90 dv/dt ...18 0.16 0.14 0.12 0.10
c
c d e f g h i j
0.08 0.06 0.04
VGS [V] =
d e gf h ki j
b
k l... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
89.10K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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