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  204aa Datasheet PDF File

For 204aa Found Datasheets File :: 451    Search Time::1.313ms    
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    TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. BUY24
OCR Text ...APPLICATIONS: TO-3 PACKAGE (TO-204aa) PAD 1 - Base Underside View PAD 2 - Emitter PAD 3 - Collector The BUY24 is a silicon planar epitaxial NPN transistor in a TO-3 (TO-204aa) metal case. It is suitable for switching applications up to...
Description SILICON PLANAR EPITAXIAL NPN POWER SWITCHING TRANSISTOR

File Size 21.11K  /  2 Page

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    Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. BU323A
OCR Text ...ent by BU323A/D CASE 1-07 TO-204aa (TO-3) Watts Watts W/_C _C/W Unit Unit 3-231 Adc Adc Vdc Vdc Vdc _C _C IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII...
Description 16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN SILICON 400 VOLTS 175 WATTS

File Size 239.02K  /  6 Page

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    INTERSIL[Intersil Corporation]
Part No. BUZ45A
OCR Text ...ER PACKAGE BRAND ower BUZ45A TO-204aa BUZ45A OSD NOTE: When ordering, use the entire part number. ET) /Author G ) /KeyS ords Harris emionducor, N- Packaging hannel JEDEC TO-204aa ower OSET, DRAIN (FLANGE) O04AA) /Creator ) /DOCIN O pdfSOURC...
Description 8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET
8.3A/ 500V/ 0.800 Ohm/ N-Channel Power MOSFET

File Size 11.82K  /  1 Page

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    INTERSIL[Intersil Corporation]
HARRIS
Part No. BUZ45
OCR Text ...MBER PACKAGE BRAND OSD BUZ45 TO-204aa BUZ45 ET) /Author NOTE: When ordering, use the entire part number. G ) /KeyS ords Harris emionduc- Packaging or, NJEDEC TO-204aa hannel ower DRAIN OS(FLANGE) ET. O04AA) /Creator ) SOURCE (PIN 2) /DOCIN ...
Description 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET
9.6A/ 500V/ 0.600 Ohm/ N-Channel Power MOSFET

File Size 11.80K  /  1 Page

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    IRF9140

IRF[International Rectifier]
Part No. IRF9140
OCR Text 204aa/AE) Product Summary Part Number IRF9140 BVDSS -100V RDS(on) 0.2 ID -18A IRF9140 100V, P-CHANNEL The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometr...
Description TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.2ohm, Id=-18A)
TRANSISTORS P-CHANNEL(Vdss=-100V Rds(on)=0.2ohm Id=-18A)
HEXFET?TRANSISTORS 100V, P-CHANNEL

File Size 147.03K  /  7 Page

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    ONSEMI[ON Semiconductor]
Part No. 2N6257 2N3771 2N3771_06 2N3772 2N377106
OCR Text ... C TJ, Tstg - 65 to + 200 TO-204aa (TO-3) CASE 1-07 STYLE 1 2N377xG AYYWW MEX 2N377x G A YY WW MEX THERMAL CHARACTERISTICS Characteristic Symbol qJC Max Unit Thermal Resistance, Junction-to-Case 1.17 C/W = ...
Description High Power NPN Silicon Power Transistors

File Size 82.69K  /  5 Page

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    IRF[International Rectifier]
Part No. IRH93130 IRH9130
OCR Text 204aa) Product Summary Part Number Radiation Level RDS(on) IRH9130 100K Rads (Si) 0.3 IRH93130 300K Rads (Si) 0.3 ID -11A -11A IRH9130 100V, P-CHANNEL RADHard HEXFET TECHNOLOGY TM (R) International Rectifier's RADHard HEXFET(R) te...
Description -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204aa package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204aa package
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204aa)

File Size 118.30K  /  8 Page

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    IRF9240 IRF9240-15

IRF[International Rectifier]
Part No. IRF9240 IRF9240-15
OCR Text 204aa/AE) Product Summary Part Number IRF9240 BVDSS -200V RDS(on) 0.5 ID -11A IRF9240 200V, P-CHANNEL The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometr...
Description Simple Drive Requirements
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.5ohm, Id=-11A)
HEXFET?TRANSISTORS 200V, P-CHANNEL
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204aa

File Size 146.26K  /  7 Page

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    IRFAE40 IRFAE40-15

International Rectifier
Part No. IRFAE40 IRFAE40-15
OCR Text 204aa/AE) Product Summary Part Number IRFAE40 IRFAE40 800V, N-CHANNEL BVDSS 800V RDS(on) 2.0 ID 4.8 The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficien...
Description Simple Drive Requirements
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
HEXFET?TRANSISTORS 800V, N-CHANNEL

File Size 147.57K  /  7 Page

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    ONSEMI[ON Semiconductor]
Part No. MJ15016G 2N3055A 2N3055A_06 2N3055AG MJ15015 MJ15015G MJ15016 2N3055A06
OCR Text ...EO 60 120 Vdc Value Unit Vdc TO-204aa (TO-3) CASE 1-07 STYLE 1 MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RqJC Max 1.52 Max 0.98 Unit _C/W Stresses exceeding Maximum Rating...
Description Complementary Silicon High-Power Transistors

File Size 85.91K  /  6 Page

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