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05DRW C68HC908 DMV16 2000672 RT8239C 75M000 BC858A V8980
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  16m Datasheet PDF File

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    CXD3027R

SONY[Sony Corporation]
Part No. CXD3027R
OCR Text ...k * Supports an external 4M-bit/16m-bit DRAM * Time axis-based data linking * ADPCM compression method (uncompressed/4 bits/ 6 bits/8 bits) 120 pin LQFP (Plastic) Digital Filter, DAC and Analog Low-pass Filter Blocks * Digital dynamic...
Description CD Digital Signal Processor with Built-in Digital Servo Shock-Proof Memory Controller Digital High & Bass Boost

File Size 1,859.51K  /  191 Page

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    CXD3027 CXD3027R-1

List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. CXD3027 CXD3027R-1
OCR Text ...pports DRAM capacities of 4M or 16m bits, and supports compression/expansion for handling the stored audio data. Applications can choose one of four modes in which data is stored in its original 16-bit word length, compressed to 4 bits, com...
Description CD Audio Digital Signal-Processing LSI Device with On-Chip Digital Servo System Allows Listening without Sound Skipping

File Size 54.69K  /  2 Page

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    CXD3029R

ETC
Sony Corporation
Part No. CXD3029R
OCR Text ...k * Supports an external 4M-bit/16m-bit DRAM * Time axis-based data linking * ADPCM compression method (uncompressed/4 bits/ 6 bits/8 bits) 120 pin LQFP (Plastic) Digital Filter, DAC and Analog Low-pass Filter Blocks * Digital dynamic...
Description CD Digital Signal Processor with Built-in Digital Servo Shock-proof Memory Controller Digital High & Bass Boost

File Size 2,409.20K  /  201 Page

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    DSK9F1208U0M K9F1208U0 K9F1208U0M- K9F1208U0M-YCB0 K9F1208U0M-YIB0 DS_K9F1208U0M

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. DSK9F1208U0M K9F1208U0 K9F1208U0M- K9F1208U0M-YCB0 K9F1208U0M-YIB0 DS_K9F1208U0M
OCR Text ...oders FLASH MEMORY 512M + 16m Bit NAND Flash ARRAY A0 - A7 (512 + 16)Byte x 131072 Page Register & S/A A8 Command Command Register Y-Gating I/O Buffers & Latches VCC VSS I/0 0 I/0 7 CE RE WE Control Logic & Hi...
Description 64M x 8 Bit NAND Flash Memory

File Size 1,135.14K  /  41 Page

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    EM566168

ETRON[Etron Technology, Inc.]
Part No. EM566168
OCR Text ... Overview The EM566168 is a 16m-bit Pseudo SRAM organized as 1M words by 16 bits. It is designed with advanced CMOS technology specified RAM featuring low power static RAM compatible function and pin configuration. This device operates ...
Description 1M x 16 Pseudo SRAM

File Size 144.24K  /  12 Page

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    K9F1208B0B K9F1208R0B K9F1208U0B

SAMSUNG[Samsung semiconductor]
Part No. K9F1208B0B K9F1208R0B K9F1208U0B
OCR Text ...F1208X0B is 512M bit with spare 16m bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typica...
Description 64M x 8 Bit NAND Flash Memory

File Size 1,018.72K  /  45 Page

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    K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208Q0B-F K9F1208Q0B-H K9F1208Q0B-P K9F1208U0B K9F1208U0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208Q0B-F K9F1208Q0B-H K9F1208Q0B-P K9F1208U0B K9F1208U0B-D K9F1208U0B-V K9F1208U0B-Y K9F1208R0B
OCR Text ...F1208X0B is 512M bit with spare 16m bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typic...
Description 64M x 8 Bit NAND Flash Memory

File Size 762.36K  /  45 Page

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    K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208Q0A-DCB0 K9F1208Q0A-HCB0 K9F1208Q0A-HIB0 K9F1208U0A-DCB0 K9F1208U0A-DI

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208Q0A-DCB0 K9F1208Q0A-HCB0 K9F1208Q0A-HIB0 K9F1208U0A-DCB0 K9F1208U0A-DIB0 K9F1208U0A-FCB0 K9F1208U0A-FIB0 K9F1208U0A-HCB0 K9F1208U0A-HIB0 K9F1208U0A-VIB0 K9F1216U0A-YCB0 K9F1216U0A-DIB0 K9F1216U0A-HIB0 K9F1216U0A-PCB0 K9F1216Q0A-HIB0 K9F1216Q0A-DCB0 K9F1216Q0A-HCB0
OCR Text ...F12XXX0A is 512M bit with spare 16m bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 20...
Description 64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V

File Size 805.26K  /  45 Page

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    K9F1208U0A K9F1216U0A

SAMSUNG[Samsung semiconductor]
Part No. K9F1208U0A K9F1216U0A
OCR Text ...F12XXU0A is 512M bit with spare 16m bit capacity. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200s on th...
Description 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

File Size 957.56K  /  45 Page

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    LC82210 LC82210L

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. LC82210 LC82210L
OCR Text ...of either 1M, 2M, 4M, 4M x 2 or 16m bit of DRAM for image memory. Supports fixed compression ratio encoding. Image memory can be accessed by external systems. Image memory compression function Supports a function for compressing/expanding p...
Description Motion JPEG Codec

File Size 56.65K  /  2 Page

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