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| Part No. |
GRS-625/PF-CH-122-T
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| OCR Text |
...] dia. pin 2.31 [58.8 mm] 1/2 [12.7 mm] center conductor cutting guide trim trim 1/2 [12.7 mm] center conductor cutting guide typ corning ...ohm grs-625/50-ch-122-t times fiber 50 ohm grs-625/50-ch-122-t commscope power feeder? grs-625/pf-ch... |
| Description |
CABLE TERMINATED, MALE, RF CONNECTOR
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| File Size |
38.61K /
1 Page |
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SamHop Microelectronics...
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| Part No. |
SP8009
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| OCR Text |
... r ds(on) (m ) 20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 v gs =2.5 v 30 24 18 12 6 0 0 1 2 3 4 5 -55 c tj=100 c 25 c 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 i d =24 a 12 a 110 100 1 10 100 0.1 v g s =6v v g s =10v drain current i d (a)... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
77.42K /
6 Page |
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SamHop Microelectronics
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| Part No. |
SP8009E
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| OCR Text |
... r ds(on) (m ) 20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 v gs =2.5 v 30 24 18 12 6 0 0 1 2 3 4 5 -55 c tj=100 c 25 c 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 i d =24 a 12 a 110 100 1 10 100 0.1 v g s =6v v g s =10v drain current i d (a)... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
111.79K /
8 Page |
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SamHop Microelectronics
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| Part No. |
SP8009EL
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| OCR Text |
... r ds(on) (m ) 20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 v gs =2.6 v 30 24 18 12 6 0 0 1 2 3 4 5 -55 c tj=100 c 25 c 0.2 0.1 0 0 2 4 6 8 10 i d =24a 12 a 110 100 1 10 100 0.1 v g s =6v v g s =10v drain current i d (a) drain-source... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
110.84K /
8 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
SP8008
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| OCR Text |
... d units parameter 30 28 84 v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics absolute maximum ratings ( t...ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , ... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
109.93K /
8 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
SP8007
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| OCR Text |
...nits parameter 24 27 81 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r d...ohm v gs =4.5v , i d =13.5a r ds(on) drain-source on-state resistance i dss ua gate threshold volta... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
112.50K /
8 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
SP8006
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| OCR Text |
... to 150 i d units parameter 24 12.5 81 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summa...ohm v gs =4.5v , i d =6.25a r ds(on) drain-source on-state resistance i dss ua gate threshold volta... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
111.81K /
8 Page |
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it Online |
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AMICCOM
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| Part No. |
A7533A
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| OCR Text |
................................ 9 12 top marking information ....................................................................................ohm systems. switch outputs (op1 & op2) can be independently selected from any of the four inputs (h... |
| Description |
4X2 Switch Matrix
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| File Size |
585.25K /
18 Page |
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it Online |
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