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Cystech Electonics Corp...
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Part No. |
MTD120C10H8-0-T6-G
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OCR Text |
10.14 revised date : 2016.11.07 page no. : 1/14 mtd120c10h8 cystek product specification n- and p-channel enhancement mode mosfet mt...0-t6-g dfn 5 6 (pb-free lead plating & halogen-free package) 3000 pcs / tape & reel ... |
Description |
N- AND P-Channel Enhancement Mode MOSFET
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File Size |
604.57K /
14 Page |
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it Online |
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Cystech Electonics Corp...
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Part No. |
MTB1K0N20KL3-0-T3-G
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OCR Text |
... junction-to-case, max r jc 10 thermal resistance, junction-to-ambient, max r ja 52 (note) c/w note : when mounted on a...0.83 1.08 v gs =10v, i d =2a r ds(on) *1 - 0.78 1.6 v gs =4.5v, i d =1a dyna... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
363.52K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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Part No. |
MTB015P10F3-0-T7-X
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OCR Text |
...e resistance vs drain current 1 10 100 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-10v v gs =-4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 -i dr... |
Description |
P-Channel Enhancement Mode Power MOSFET
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File Size |
360.97K /
9 Page |
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it Online |
Download Datasheet |
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Cystech Electonics Corp...
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Part No. |
MTD015P10E3-0-UB-X
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OCR Text |
...e resistance vs drain current 1 10 100 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-10v v gs =-4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 -i dr... |
Description |
P-Channel Enhancement Mode Power MOSFET
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File Size |
318.34K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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