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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDMS8660S
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OCR Text |
...
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction Temperature
90 80 I...300s DUTY CYCLE = 2%MAX
Figure 4. On-Resistance vs Gate to Source Voltage
10
IS, REVERSE DRAIN ... |
Description |
N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM)
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File Size |
373.70K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDZ191P
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OCR Text |
... VDS = -5V VDS = -5V, ID = -1A -10 7 -0.4 -0.6 2 67 85 140 87 85 123 200 123 A S m -1.5 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg...300s, Duty cycle < 2.0%.
FDZ191P Rev.F (W)
2
www.fairchildsemi.com
www.DataSheet4U.com
... |
Description |
P-Channel 1.5V PowerTrench WL-CSP MOSFET
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File Size |
387.58K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDZ193P
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OCR Text |
... VDS = -5V VDS = -5V, ID = -1A -10 5.6 -0.6 -0.9 3 66 92 195 84 90 130 300 123 A S m -1.5 V mV/C
Dynamic Characteristics
Ciss Coss Crss ...300s, Duty cycle < 2.0%.
FDZ193P Rev.C1 (W)
2
www.fairchildsemi.com
P-Channel 1.7V Power... |
Description |
P-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90mohm
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File Size |
207.49K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDZ493P
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OCR Text |
... (Note 1a) Ratings -20 12 -4.6 -10 1.7 -55 to +150 Units V V A W C
Thermal Characteristics
RJA Thermal Resistance, Junction to Ambient (...300s, Duty cycle < 2.0%.
FDZ493P Rev.B(W)
2
www.fairchildsemi.com
FDZ493P P-Channel 2.5V... |
Description |
P-Channel 2.5V Specified PowerTrench BGA MOSFET -20V, -4.6A, 46mohm
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File Size |
365.73K /
6 Page |
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IRF[International Rectifier]
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Part No. |
IRF7210
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OCR Text |
...Units
C/W
www.irf.com
1
10/19/04
IRF7210
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS V(BR)DSS
...300s; duty cycle 2%.
2
www.irf.com
IRF7210
20
VGS -1.8V -1.6V -1.4V -1.2V -1.0V BOTTOM -... |
Description |
HEXFET Power MOSFET
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File Size |
138.32K /
7 Page |
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International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRF7220
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OCR Text |
...n 1 inch square copper board, t<10 sec Starting TJ = 25C, L = 1.8mH
RG = 25W , IAS = 11A. (See Figure 10)
Pulse width 300s; duty cycle 2%.
2
www.irf.com
IRF7220
80
VG S - 4 .5V - 4.0 V - 3.0 V - 2.0 V - 1.8 V - 1.6 V - 1.... |
Description |
HEXFET Power MOSFET HEXFET功率MOSFET
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File Size |
137.51K /
7 Page |
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NTE Electronics, Inc. NTE[NTE Electronics]
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Part No. |
NTE66
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OCR Text |
...- - - - - - Typ - - - - - - - 0.10 7.6 640 240 72 10 34 23 24 17 3.7 7 Max - 4.0 100 -100 250 1000 - 0.16 - - - - 15 51 35 36 26 5.5 11 Unit...300s, Duty Cycle 2%. Source-Drain Diode Ratings and Characteristics:
Parameter Continuous Source C... |
Description |
MOSFET N-Ch, Enhancement Mode High Speed Switch
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File Size |
26.14K /
3 Page |
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SOLID STATE DEVICES INC SSDI[Solid States Devices, Inc] Solid State Devices, Inc.
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Part No. |
SSR2010DRJ SSR2010CAJ SSR2010CTJ SSR2010DJ SR2010CAJDB
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OCR Text |
...100
Value
Volts
Units
10 200
Amps Amps
TOP & TSTG RJC
-65 to +175 1.0 2.0
C
C/W
Available in the following...300s Pulse) (IF = 5 Adc, TA = 25C, 300s Pulse) (IF = 10 Adc, TA = 25C, 300s Pulse) Instantaneous For... |
Description |
20 AMPS 100 VOLTS SCHOTTKY RECTIFER 20 AMPS, 100 VOLTS CENTERTAP SCHOTTKY RECTIFIER 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-257AA
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File Size |
136.70K /
2 Page |
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Price and Availability
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