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  1.2f Datasheet PDF File

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    Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. CM100DU-12F
OCR Text 12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 100 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 ...
Description Trench Gate Design Dual IGBTMOD?100 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/600 Volts

File Size 104.08K  /  4 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. CM100TJ-12F
OCR Text 12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMODTM 100 Amperes/600 Volts A D E F 19 18 NOT CONNECTED U G NOT CONNECTED H 17 16 15 20 14 B ...
Description 128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT
Trench Gate Design 100 Amperes/600 Volts

File Size 97.94K  /  4 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM150TU-12F
OCR Text 12F HIGH POWER SWITCHING USE CM150TU-12F IC ................................................................... 150A VCES ............................................................ 600V Insulated Type 6-elements in a pack APPLIC...
Description 240 x 128 pixel format, CFL Backlight with power harness
HIGH POWER SWITCHING USE

File Size 77.38K  /  4 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. CM150TU-12F
OCR Text 12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMODTM 150 Amperes/600 Volts J S - NUTS (5 TYP) CM N P K K R T (4 TYP.) P GUP EUP GVP EVP GWP EWP L B...
Description Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness

File Size 133.38K  /  4 Page

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    Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Part No. CM300DU-12F
OCR Text 12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 300 Amperes/600 Volts TC MEASURING POINT A D T (4 TYP.) F G2 BE CM E2 H U J H C2E1 E2 C1 ...
Description Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/600 Volts

File Size 64.44K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM600HU-12F
OCR Text 12F HIGH POWER SWITCHING USE CM600HU-12F IC ................................................................... 600A VCES ............................................................ 600V Insulated Type 1-elements in a pack APPLIC...
Description HIGH POWER SWITCHING USE

File Size 53.83K  /  4 Page

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    POWEREX[Powerex Power Semiconductors]
Part No. CM600HU-12F
OCR Text 12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMODTM 600 Amperes/600 Volts N (2 TYP) A D G F G C L M (2 TYP.) E C P E B E CM H L (4 TYP) J ...
Description Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/600 Volts

File Size 100.04K  /  4 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. CM75DU-12F
OCR Text 12F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 75 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1...
Description Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts

File Size 371.85K  /  4 Page

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    IXYS, Corp.
IXYS[IXYS Corporation]
Part No. DSA9-18F DS9-08F DS9-12F DSA9-12F DSA9-16F
OCR Text ... Standard Types DS 9-08F DS 9-12F Avalanche Types DSA 9-12F DSA 9-16F DSA 9-18F A C DO-203 AA C A M5 A = Anode C = Cathode x Only for Avalanche Diodes Symbol IF(RMS) IF(AVM) PRSM IFSM Test Conditions TVJ = TVJM ...
Description Rectifier Diode Avalanche Diode 11 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AA
Discrete Rectifier Diodes

File Size 45.25K  /  2 Page

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    EMC[ELAN Microelectronics Corp]
Part No. EM32117Q EM32117
OCR Text ... SEG31 16f 16g 16e 16d SEG23 12f 12g 12e 12d SEG15 8f 8g 8e 8d SEG7 4f 4g 4e 4d SEG30 16a 16b 16c SEG29 15f 15g 15e 15d SEG21 11f 11g 11e 11d SEG13 7f 7g 7e 7d SEG5 3f 3g 3e 3d SEG28 15a 15b 15c SEG27 14f 14g 14e 14d SEG19 10...
Description 16 DIGIT LCD DRIVER WITH CHECK TIME FUNCTION
16DIGITLCDDRIVERWITHCHECKTIMEFUNCTION

File Size 191.97K  /  21 Page

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