0.8-6ghz pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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0.8-6ghz Datasheet PDF File

For 0.8-6ghz Found Datasheets File :: 812 Search Time::1.906ms
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				Infineon Technologies AG
Part No.	BFP182R
OCR Text	...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...8 V hFE 50 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit ...
Description	NPN Silicon RF Transistor RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
File Size	86.41K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFP182W
OCR Text	...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...8 V hFE 50 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit ...
Description	RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
File Size	76.44K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BFR183T
OCR Text	...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...8 V hFE 50 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit ...
Description	NPN Silicon RF Transistor
File Size	79.60K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BFR183W
OCR Text	...eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emit...8 V hFE 50 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit ...
Description	RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
File Size	78.50K / 7 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors GmbH UMS[United Monolithic Semiconductors]
Part No.	CHR2295 CHR2295-99F_00 CHR2295-99F/00
OCR Text	...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...8.00 4.00 0.00 (dB) I Main Features * * * * * * * Broadband performances : 24-30GHz 11 dB co...
Description	24-30GHz Integrated Down Converter 24 - 30GHz的集成下变频
File Size	143.39K / 6 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	LX5506B LX5506BLQ
OCR Text	... Footprint: 3x3mm2 Low Profile: 0.9mm APPLICATIONS/BENEFITS The LX5506B is a power amplifier optimized for the FCC Unlicensed National I...8, 12,13 Description RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled ...
Description	InGaP HBT 4 6GHz Power Amplifier From old datasheet system InGaP HBT 4 6GHz Power Amplifier
File Size	195.65K / 7 Page	View it Online	Download Datasheet

				http:// Sirenza Microdevices, Inc
Part No.	SZM-2066Z
OCR Text	.../W 10 503 7.5 12.5 Min. 2500 32.0 32.2 33.5 33.7 26.0 -45 7.7 10.5 15.5 0.9 to 1.8 583 4 50 663 -40 Typ. Max. 2700 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility f...
Description	2.4-2.7GHz 2W Power Amplifier
File Size	637.60K / 13 Page	View it Online	Download Datasheet

				Sirenza Microdevices, Inc N.A.
Part No.	SZM-3066Z
OCR Text	...n. 3300 33.5 34 26 -38 5 14 9 5 0.9 to 2.2 600 5 0.1 680 6 -33 Typ. Max. 3800 Key Specifications Symbol fO P1dB S21 Pout IM3 NF IRL ORL ...8 33.9 26 750 19 9 3.8GHz 30.0 33.0 26 720 16 8 Absolute Maximum Ratings Parameters VC3 Collecto...
Description	3.3-3.8GHz 2W Power Amplifier
File Size	596.88K / 9 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SK1646
OCR Text	...unit : mm 2134A [2SK1646] 1.9 0.95 0.95 0.4 * * * Ideal for use in C to X-band local oscillator and amplifier. The chip surface i...8 1 : Gate 2 : Source 3 : Drain 4 : Source 1.1 SANYO : CP4 Specifications Absolute Maximu...
Description	FOR C TO X-BAND LOCAL OSCILLATOR AND AMPLIFIER
File Size	33.24K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL810IQ-3C
OCR Text	...S = 220mA IGS = -2.2mA Min. -0.1 -5 48.0 Limits Typ. Max. 8 -0.3 49.0 12.0 50 11.5 0.8 -0.5 15.0 1.1 Unit A V V dBm dB % A C/W VDS = 12V f = 2.6 GHz IDS = 5.0A Pin = 40.0dBm 11.0 - Channel to Case - Edition 1.1 Octob...
Description	L-BAND HIGH POWER GAAS FET
File Size	130.63K / 4 Page	View it Online	Download Datasheet

For 0.8-6ghz Found Datasheets File :: 812 Search Time::1.906ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |