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  0.0087 Datasheet PDF File

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    S1M8657X01-F0T0 S1M8657 S1M8657X01-E0T0

Samsung semiconductor
Part No. S1M8657X01-F0T0 S1M8657 S1M8657X01-E0T0
OCR Text ...are fabricated on the Samsung's 0.5um high-speed, high-frequency BICMOS processing and can achieve superior high frequency and low power digital operations. Its operating voltage is 2.7V - 3.6V, and operating temperature -30C - +85C. 48-...
Description From old datasheet system
TX IF/BBA WITH AGC

File Size 278.78K  /  34 Page

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    Fujitsu
Part No. RY5W-K
OCR Text ...Pd, zlaceny 100 m 60 Vac 24 Vdc 0.5 Aac 1 Adc 120 Vac 60 Vdc 1A 30 VA 24 W 5 ms / 2 ms 300 Vac 1000 Vac 100 x 10 E3 cyklu -30C ... +90C 1.7 g UL, CSA, FCC68 Spinaci eas Izolaeni pevnost ivotnost Pracovni teploty Hmotnost Vyhovuje normi o...
Description Relay

File Size 119.59K  /  2 Page

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    ROHM Electronics
Part No. RLZ10B
OCR Text ...ns (Units : mm) CATHODE BAND 0.4 0.4 Features 1) Small surface mounting type. (LLDS) 2) High reliability. 1st 3.4 +0.2 -0.1 3rd 2nd 3 color bands are printed on body 1.40.1 1.5Max. Construction Silicon epitaxial planar ...
Description (RLZ Series) Zener Diode

File Size 53.45K  /  3 Page

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    RH5RI351B RH5RI351A RH5RI352B RH5RIXX1B RH5RIXX2B RH5RIXX3B RH5RI502B RH5RI501B

RICOH[RICOH electronics devices division]
Part No. RH5RI351B RH5RI351A RH5RI352B RH5RIXX1B RH5RIXX2B RH5RIXX3B RH5RI502B RH5RI501B
OCR Text ... standby supply current at MAX. 0.5A. These RH5RIxx1B/xx2B/xx3B ICs are suitable for use with battery-powered instruments with low noise and ultra low supply current. FEATURES * Small Number of External Components ..........Only an indu...
Description VFM STEP-UP DC/DC CONVERTER

File Size 169.77K  /  24 Page

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    RF3100-3K RFMICRODEVICESINC-RF3100-3K

RF Micro Devices, Inc.
RFMD[RF Micro Devices]
Part No. RF3100-3K RFMICRODEVICESINC-RF3100-3K
OCR Text ... 2 POWER AMPLIFIERS 4.390 6.0 sq 0.100 Dimensions in mm. Product Description The RF3100-3K is a high-power, high-efficiency linear amplifier IC targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Arsen...
Description 3V 1700MHZ LINEAR AMPLIFIER MODULE 1750 MHz - 1780 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER

File Size 115.80K  /  6 Page

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    RF3100-2 RF3100-2PCBA

RF Micro Devices, Inc.
RFMD[RF Micro Devices]
Part No. RF3100-2 RF3100-2PCBA
OCR Text ... 2 POWER AMPLIFIERS 4.390 6.0 sq 0.100 Dimensions in mm. Product Description The RF3100-2 is a high-power, high-efficiency linear amplifier module targeting 3V hand-held systems. The device is manufactured on an advanced Gallium Ar...
Description 3V 900MHZ LINEAR AMPLIFIER MODULE 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER

File Size 117.48K  /  6 Page

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    RF2314 RF2314PCBA

RF Micro Devices
Part No. RF2314 RF2314PCBA
OCR Text ...torage Temperature Rating 8.0 32 -40 to +85 -40 to +150 Unit V mA C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Device...
Description    GENERAL PURPOSE LOW NOISE AMPLIFIER

File Size 70.93K  /  4 Page

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    RA354GP RA351GP RA352GP RA353GP RA355GP RA356GP RA357GP

Micro Commercial Components
Part No. RA354GP RA351GP RA352GP RA353GP RA355GP RA356GP RA357GP
OCR Text ...imum DC Reverse Current At IR 5.0 A TJ = 25C Rated DC Blocking 150A TJ = 1 00 C Voltage Typical Junction CJ 100pF Measured at Capacitance 1.0MHz, VR=4.0V *Pulse test: Pulse width 300 sec, Duty cycle 2% DIMENSIONS INCHES MIN .380 .165 .21...
Description 35Amp Glass Passivated Rectifier 50 to 1000 Volts

File Size 109.78K  /  2 Page

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    R669

Hamamatsu Photonics
Hamamatsu Corporation
Part No. R669
OCR Text ... and Last Dynode Value 1500 250 0.1 -80 to +50 Unit V dc V dc mA C CHARACTERISTICS (at 25 C) Cathode Sensitivity Anode Sensitivity Parameter Luminous (2856 K) Radiant at 420 nm Red/White Ratio (R-68) Luminous (2856 K) Radiant at 420 nm ...
Description PHOTOMULTIPLIER TUBE

File Size 43.22K  /  2 Page

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