|
|
|
hitachi
|
Part No. |
2SK1339
|
OCR Text |
...S V(BR)GSS I GSS 900 30 -- -- 2.0 -- 1.2 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 5.0 1.9 425 175 85 10 40 50 55 0.9 850 Max -- -- 10 250 3.0 7.0 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 3 A, VGS ... |
Description |
Silicon NPN Triple Diffused From old datasheet system
|
File Size |
27.85K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
Part No. |
2SK2195
|
OCR Text |
...specially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION
Switching power supply of AC 100V input High voltage power supply Inverter
RATINGS
Absolute Maximum Ratings Tc = 25 ... |
Description |
VX-2 Series Power MOSFET(500V 15A)
|
File Size |
381.52K /
10 Page |
View
it Online |
Download Datasheet |
|
|
|
Fuji Electric Holdings Co., Ltd.
|
Part No. |
2SK2292-01L 2SK2292-01S
|
OCR Text |
... 100H
Min. 250 2,5
Typ. 3,0 10 0,2 10 0,8 2,0 230 70 45 10 20 25 10
Max. 3,5 500 1,0 100 1,1 350 110 70 15 30 40 15 4 8 1,5
1,0
4
IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C
1,0 110 0,5
Unit V V A mA... |
Description |
N-channel MOS-FET 4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
File Size |
85.53K /
2 Page |
View
it Online |
Download Datasheet |
|
|
|
hitachi
|
Part No. |
2SK2928
|
OCR Text |
...res
* Low on-resistance R DS = 0.040 typ. * High speed switching * 4V gate drive device can be driven from 5V source
Outline
2SK2928
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain cur... |
Description |
Silicon NPN Triple Diffused From old datasheet system
|
File Size |
24.31K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
Part No. |
2SK3475
|
OCR Text |
...est Condition VDS = 20 V, VGS = 0 V VGS = 10 V VDS = 7.2 V, ID = 2 mA VGS = 10 V, ID = 75 mA VDS = 7.2 V, IDS = 208 mA VDS = 7.2 V, VGS = 0 V, f = 1 MHz VDS = 7.2 V, VGS = 0 V, f = 1 MHz VDS = 7.2 V, Iidle = 50 mA (VGS = adjust), f = 520 MH... |
Description |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications VHF-and UHF-band Amplifier Applications
|
File Size |
108.24K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|