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  -8a Datasheet PDF File

For -8a Found Datasheets File :: 16956    Search Time::1.578ms    
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    SLA7024M SLA7026M SLA7027 SLA7027MU SLA7026

Sanken Electric Co.,Ltd.
SANKEN ELECTRIC CO LTD
SANKEN[Sanken electric]
Part No. SLA7024M SLA7026M SLA7027 SLA7027MU SLA7026
OCR Text ...100V 0.8 ID=1A 0.5 VS=24V, ID=0.8A 0.7 VS=24V, ID=0.8A 0.1 VS=24V, ID=0.8A ID=1A 0.5 VS=24V, ID=1A 0.7 VS=24V, ID=1A 0.1 VS=24V, ID=1A 2 VDSS=100V 0.8 ID=3A 0.5 VS=24V, ID=1A 0.7 VS=24V, ID=1A 0.1 VS=24V, ID=1A VDSS=100V 2 VDSS=100V 0.8 V 2...
Description 2-Phase Stepper Motor Unipolar Driver ICs

File Size 73.08K  /  7 Page

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    AP02N70EJ

Advanced Power Electronics Corp.
Part No. AP02N70EJ
OCR Text ...-resistance 3 v gs =10v, i d =0.8a - - 7 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =0.8a - 0.65 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua drai...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 105.19K  /  5 Page

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    AP02N70EJ-HF AP02N70EJ-HF14

Advanced Power Electronics Corp.
Part No. AP02N70EJ-HF AP02N70EJ-HF14
OCR Text ...-resistance 3 v gs =10v, i d =0.8a - - 7 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =0.8a - 0.65 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua drai...
Description ESD Improved Capability
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 55.23K  /  4 Page

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    AP02N70EI-HF AP02N70EI-HF14

Advanced Power Electronics Corp.
Part No. AP02N70EI-HF AP02N70EI-HF14
OCR Text ...-resistance 3 v gs =10v, i d =0.8a - - 7 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =0.8a - 0.65 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua i gss...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 55.75K  /  4 Page

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    AON2803

Alpha & Omega Semiconductors
Part No. AON2803
OCR Text 8a r ds(on) (at v gs =-4.5v) < 70m w r ds(on) (at v gs =-2.5v) < 90m w r ds(on) (at v gs =-1.8v) < 115m w symbol the aon2803 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with ga...
Description 20V Dual P-Channel MOSFET

File Size 253.26K  /  5 Page

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    Advanced Power Electronics
Part No. 15N03GH
OCR Text ...e on-resistance v gs =10v, i d =8a - - 80 m v gs =4.5v, i d =6a - - 100 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =18a - 16 - s i dss drain-source leakage current (t j =...
Description Search --To AP15N03GH

File Size 99.55K  /  6 Page

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    INCHANGE Semiconductor
Part No. BUX33
OCR Text ...itter saturation voltage i c = 8a; i b = 2a 1.0 v v ce( sat )-2 collector-emitter saturation voltage i c = 12a; i b = 3a 4.0 v v be( sat ) base-emitter saturation voltage i c = 8a; i b = 2a 1.3 v i cex collecto...
Description Silicon NPN Power Transistor

File Size 207.73K  /  2 Page

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    Semelab
Part No. BUX33B BUX33A
OCR Text ... unit i c = 200ma i b = 0 i c = 8a i b = 2a v ce = 800v v be = ?1.5v t c = 100c i c = 0 v be = -8v i c = 8a i b = 2a i c = 12a i b = 3a i c = 8a v ce = 3v i c = 0.2a v ce = 10v v cc = 240v t p = 20 s i c = 8a i b1 =2a v cc = 240v t p = 20 ...
Description HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS

File Size 50.19K  /  4 Page

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