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  wire-bond Datasheet PDF File

For wire-bond Found Datasheets File :: 3708    Search Time::1.687ms    
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    Hittite Microwave Corpo...
Part No. HMC292-09
OCR Text ...per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonicall...bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0...
Description GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz

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    HMC-ALH476

Hittite Microwave Corporation
Part No. HMC-ALH476
OCR Text ...sible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") 1 LOW NOISE AMPLIFIERS - CHIP 1 - 203 RF Ground Plane ...
Description GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz

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    HMC1105

Analog Devices
Part No. HMC1105
OCR Text ...ible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle...
Description Microwave Test Equipment

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    HMC-ALH459

Hittite Microwave Corporation
Part No. HMC-ALH459
OCR Text ...ermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measure...BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD ...
Description GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz

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    HMC-ALH364 HMC-ALH36409

Hittite Microwave Corporation
Part No. HMC-ALH364 HMC-ALH36409
OCR Text ...sible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") 1 LOW NOISE AMPLIFIERS - CHIP 1 - 161 RF Ground Plane ...
Description GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 32 GHz

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    Agilent (Hewlett-Packard)
Part No. AMMC-3041
OCR Text ... connecting a 20- mil long bond wire from the if output pad on the mmic to a shunt, off- chip 0.5 pf chip capacitor as indicated in figure 7. for up conversion applications, the input signal is normally applied to the if port, the loc...
Description AMMC-3041 · 18-42 GHz Double Balanced Mixer

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    HMMC-5027

Agilent(Hewlett-Packard)
Part No. HMMC-5027
OCR Text ...onding with 0.7 mil diameter au wire is recommended for all bonds. tool force should be 22 1 gram, stage temperature should be 150 2 ...bond to 3 15 nf dc feedthru 4 nh inductor (1.0 mil gold wire bond with length of 200 mils) 0.7 mi...
Description 2 -26.5 GHz Broadband Traveling Wave Amplifier(2 -26.5 GHz 宽频行波放大器(用于中等功率

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    HMC-XTB10607

Hittite Microwave Corporation
Part No. HMC-XTB10607
OCR Text ...ermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measure...BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD ...
Description GaAs MMIC PASSIVE x3 FREQUENCY MULTIPLIER, 24 - 30 GHz INPUT

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    HMC26200 HMC262

Hittite Microwave Corporation
Part No. HMC26200 HMC262
OCR Text ...d via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils). The HMC262 may be used in conjunction with HMC203, HMC258, ...BOND PADS ARE 0.100 (0.004) SQUARE BOND PAD SPACING, CTR-CTR: 0.150 (0.006) BACKSIDE METALLIZATION: ...
Description GaAs MMIC LOW NOISE AMPLIFIER, 15 - 24 GHz

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    CEL
Part No. NE321000
OCR Text ...ude bond wires. gate : total 1 wire(s), 1 per bond pad,(426 m) long each wire ; 131 m height. drain : total 1 wire(s), 1 per bond pad,(409 m) long each wire ; 214 m height. source : total 2 wire(s), 2 per side,(665 m) long each w...
Description ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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