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SGS Thomson Microelectronics
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| Part No. |
AN900
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| OCR Text |
...hin oxide layer onto the wafer. wafers are inserted into a high temperature furnace (up to 1200 c) and doping gazes penetrate the silicon or react with it to grow a silicon oxide layer. ionic implantation it allows to introduce a dopant at... |
| Description |
MCUS - INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY
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| File Size |
488.36K /
15 Page |
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Agilent (Hewlett-Packard)
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| Part No. |
ATF-35143
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| OCR Text |
... samples taken from 9 different wafers. future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. 8. measurements made on production test board. this circuit represents a trade-off betw... |
| Description |
ATF-35143 · SC-70 (SOT-343) Low Noise 21 dBm OIP3
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| File Size |
169.52K /
19 Page |
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it Online |
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Agilent
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| Part No. |
ATF-58143
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| OCR Text |
... samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. Measurements made on production test board. This circuit represents a trade-off between ... |
| Description |
Pseudomorphic HEMT
From old datasheet system
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| File Size |
106.83K /
9 Page |
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it Online |
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Agilent (Hewlett-Packard)
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| Part No. |
ATF-34143
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| OCR Text |
... std cpk = 1.37245 std = 0.66 9 wafers sample size = 450 nf (db) figure 3. nf @ 2 ghz, 4 v, 60 ma. lsl=0.1, nominal=0.47, usl=0.8 0 0.4 0.2 0.6 0.8 120 100 80 60 40 20 0 -3 std +3 std cpk = 2.69167 std = 0.04 9 wafers sample size = 450 gain... |
| Description |
ATF-34143 · SC-70 (SOT-343) Low Noise 31.5 dBm OIP3
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| File Size |
140.95K /
15 Page |
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it Online |
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Emerging Memory & Logic Solutions
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| Part No. |
EM640FV16FW
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| OCR Text |
...assifications for emlsi die and wafers products, which are c1 and c2 for die and w1 and w2 for wafer, respective ly. each die and wafer support dedicated charateristics and probe t he eletrical parameters within their specifications. foll... |
| Description |
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
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| File Size |
118.43K /
11 Page |
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it Online |
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Avago Technologies Ltd.
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| Part No. |
MGA-412P8-TR1G MGA-412P8-BLKG MGA-412P8-TR2G
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| OCR Text |
... samples taken from 3 different wafers and 3 different lots. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 5. measurements are made on production test board, which represents a ... |
| Description |
GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications
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| File Size |
123.03K /
8 Page |
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NXP Semiconductors N.V.
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| Part No. |
SL1ICS3001W/N4D00
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| OCR Text |
...is electrically neutral at sawn wafers vss electrical connection of the substrate pad; the pad is electrically neutral at sawn wafers handbook, halfpage mgw340 lb vss test la fig.2 pad locations.
2002 may 23 5 philips semiconductors prod... |
| Description |
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| File Size |
156.18K /
20 Page |
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it Online |
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