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Alpha & Omega Semiconductor...
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Part No. |
AOTF4126
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Description |
fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge
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File Size |
420.24K /
7 Page |
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it Online |
Download Datasheet
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Kersemi Electronic Co.,...
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Part No. |
FQB3N60
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Description |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
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File Size |
626.58K /
4 Page |
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it Online |
Download Datasheet
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MICROSEMI POWER PRODUCTS GROUP ADPOW[Advanced Power Technology]
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Part No. |
APT100GN60B2 APT100GN60B2G B2G
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Description |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: T-MAX™ [B2]; BV(CES) (V): 600; VCE(sat) (V): 1.5; IC (A): 87; IGBT
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File Size |
393.22K /
6 Page |
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it Online |
Download Datasheet
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Price and Availability
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