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  sizetm Datasheet PDF File

For sizetm Found Datasheets File :: 450    Search Time::2.563ms    
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    STD19NE06

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STD19NE06
OCR Text ...ectronis unique "Single Feature sizetm" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manuf...
Description N-CHANNEL POWER MOSFET
N-CHANNEL 60V - 0.042 W - 19A IPAK/DPAK STripFET POWER MOSFET
N-CHANNEL 60V - 0.042 OHM - 19A IPAK/DPAK STRIPFET POWER MOSFET

File Size 294.35K  /  9 Page

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    STD5NE10L 6260 STD5NE10LT4 STD5NE10L-1

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STD5NE10L 6260 STD5NE10LT4 STD5NE10L-1
OCR Text ...tronics unique " Single Feature sizetm " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable man...
Description 5 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
5 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
From old datasheet system
N - CHANNEL 100V - 0.3 - 5A - DPAK/IPAK STripFET TM POWER MOSFET
N - CHANNEL 100V - 0.3 ohm - 5A - DPAK/IPAK STripFET POWER MOSFET
N-CHANNEL 100V - 0.3 OHM - 5A - DPAK/IPAK STRIPFET POWER MOSFET
N-CHANNEL 100V - 0.3 OHM - 5A - DPAK/IPAK STRIPFET POWER MOSFET

File Size 43.54K  /  6 Page

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    STD5NE10 6522

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STD5NE10 6522
OCR Text ...ctronics unique "Single Feature sizetm" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manu...
Description N - CHANNEL 100V - 0.32 ohm - 5A TO-251/TO-252 STripFET] POWER MOSFET - 100V的通道- 0.32欧姆- 5A条TO-251/TO-252 STripFET]功率MOSFET
N - CHANNEL 100V - 0.32 - 5A TO-251/TO-252 STripFET TM POWER MOSFET
From old datasheet system

File Size 42.70K  /  3 Page

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    STP45NE06L STP45NE06LFP P45NE06L

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STP45NE06L STP45NE06LFP P45NE06L
OCR Text ...ctronics unique "Single Feature sizetm " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manu...
Description STP45NE06L
N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFET POWER MOSFET
N-CHANNEL 60V - 0.022 OHM - 45A - TO-220/TO-220FP STRIPFET POWER MOSFET

File Size 87.11K  /  6 Page

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    STP45NE06 STP45NE06FP STP45NEO6

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STP45NE06 STP45NE06FP STP45NEO6
OCR Text ...-THOMSON unique "Single Feature sizetm " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manuf...
Description N-CHANNEL 60V - 0.022 OMH - 45A - TO-220/TO-220FP STRIPFET POWER MOSFET
N - CHANNEL 60V - 0.022ohm - 45A - TO-220/TO-220FP STripFETO POWER MOSFET
Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode

File Size 89.14K  /  6 Page

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    STP45NF06

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STP45NF06
OCR Text ...ctronics unique "Single Feature sizetm" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manuf...
Description N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFETPOWER MOSFET N沟道60V 0.022ohm - 38A条,220 STripFET⑩功率MOSFET
N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFET⑩ POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFET POWER MOSFET
N-CHANNEL 60V 0.022 OHM 38A TO-220 STRIPFET POWER MOSFET

File Size 113.53K  /  6 Page

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    STD38NF03L

STMICROELECTRONICS[STMicroelectronics]
Part No. STD38NF03L
OCR Text ...ctronics unique "Single Feature sizetm" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manu...
Description N - CHANNEL 30V - 0.013 ohm - 38A TO-252 STripFET POWER MOSFET

File Size 45.31K  /  6 Page

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    STE180NE10

IXYS, Corp.
STMICROELECTRONICS[STMicroelectronics]
Part No. STE180NE10
OCR Text ...ctronics unique "Single Feature sizetm" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manuf...
Description N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET] POWER MOSFET N沟道100V 4.5毫欧- 180A 1000V的集电极STripFET]功率MOSFET

File Size 88.12K  /  8 Page

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    STN2NE06 6364

STMICROELECTRONICS[STMicroelectronics]
Part No. STN2NE06 6364
OCR Text ...ctronics unique "Single Feature sizetm" stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manuf...
Description From old datasheet system
N-CHANNEL 60V - 0.18 - 2A - SOT-223 STripFET TM POWER MOSFET
N-CHANNEL 60V - 0.18ohm - 2A - SOT-223 STripFET POWER MOSFET

File Size 83.68K  /  8 Page

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    STN4NE03L 6148

SGS Thomson Microelectronics
ST Microelectronics
STMicroelectronics
Part No. STN4NE03L 6148
OCR Text ...tronics unique " Single Feature sizetm " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable man...
Description N - CHANNEL 30V - 0.037Ohms - 4A - SOT-223 STripFET POWER MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
N - CHANNEL 30V - 0.037ohm - 4A - SOT-223 STripFET POWER MOSFET

File Size 90.16K  /  8 Page

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For sizetm Found Datasheets File :: 450    Search Time::2.563ms    
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