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  rg-195 u Datasheet PDF File

For rg-195 u Found Datasheets File :: 657    Search Time::1.641ms    
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    HGTG12N60B3

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG12N60B3
OCR Text ... 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = -10mA, VGE = 0V VCE = 600V TC = 25oC TC = 150oC TC = ...
Description 27A, 600V, uFS Series N-Channel IGBTs

File Size 199.68K  /  8 Page

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    HGTG12N60D1 HGTG12N60D1D

INTERSIL[Intersil Corporation]
Part No. HGTG12N60D1 HGTG12N60D1D
OCR Text ...VEC tRR L = 500H, IC = IC90, RG = 25V, VGE = 15V, TJ = +150oC, VCE = 0.8 BVCES V ns 1. Turn-off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and endi...
Description 12A/ 600V N-Channel IGBT with Anti-Parallel ultrafast Diode
12A, 600V N-Channel IGBT with Anti-Parallel ultrafast Diode

File Size 36.37K  /  6 Page

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    HGTG32N60E2

INTERSIL[Intersil Corporation]
Part No. HGTG32N60E2
OCR Text ...I WOFF RJC L = 500H, IC = IC90, RG = 25, VGE = 15V, TJ = +125oC, VCE = 0.8 BVCES TC = +25oC TC = +125oC TC = +25oC TC = +125oC TC = +25oC MIN 600 3.0 TYP 2.4 2.4 4.5 MAX 250 4.0 2.9 3.0 6.0 500 260 345 820 800 0.6 uNITS V A mA V V V Gate...
Description 32A/ 600V N-Channel IGBT
32A, 600V N-Channel IGBT

File Size 32.99K  /  4 Page

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    IXFK170N10 IXFN170N10

IXYS[IXYS Corporation]
Part No. IXFK170N10 IXFN170N10
OCR Text ... 100 A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C D (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G V/ns 600 W C C V~ V~ D G = ...195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 144.23K  /  4 Page

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    IXFK55N50 IXFN55N50 IXFN55N50F IXFX55N50

IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXFK55N50 IXFN55N50 IXFN55N50F IXFX55N50
OCR Text ...he Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weig...195 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 50 95 0.21 0.05 S pF pF pF ns ns ns ns nC nC nC K/...
Description HiPerRF Power MOSFETs 55 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
HiPerRF Power MOSFETs 55 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 105.10K  /  2 Page

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    IXFR55N50F

IXYS[IXYS Corporation]
Part No. IXFR55N50F
OCR Text Rg High dV/dt, Low trr IXFR 55N50F VDSS = 500 V ID25 = 55 A RDS(on) = 90 m trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR ...195 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT 50 95 0.30 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W D...
Description HiPerRF Power MOSFETs F-Class: MegaHertz Switching

File Size 496.18K  /  2 Page

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    STP60NF06 STP60NF06FP

STMicroelectronics
ST Microelectronics
Part No. STP60NF06 STP60NF06FP
OCR Text ...onditions VDD = 30 V, ID = 30 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 48V, ID =60A,VGS = 10V Min. Typ. 16 108 49 18 14 66 Ma...195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.0...
Description N-CHANNEL 60V 0.014 OHM 60A TO-220 STRIPFET POWER MOSFET
N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET?/a> POWER MOSFET
N-CHANNEL 60V 0.014 OHM 60A TO-220 STRIPFET POWER MOSFET
N-CHANNEL 60V - 0.014OHM - 60A TO-220/TO-220FP STRIPFET⒙ POWER MOSFET
N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET⑩ POWER MOSFET
N-CHANNEL Power MOSFET

File Size 329.52K  /  9 Page

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    IRF644B IRFS644B IRF644 IRF644BFP001

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF644B IRFS644B IRF644 IRF644BFP001
OCR Text ..., 5) VDD = 125 V, ID = 14 A, RG = 25 (Note 4, 5) -------- 20 115 150 95 47 6.2 23 50 240 310 200 60 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous D...
Description 250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRF644 & IRF644A

File Size 897.68K  /  10 Page

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    IRF650 IRF650B IRFS650B IRF650BFP001

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF650 IRF650B IRFS650B IRF650BFP001
OCR Text ..., 5) VDD = 100 V, ID = 32 A, RG = 25 (Note 4, 5) -------- 30 240 295 195 95 13 43 70 490 600 400 123 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous ...
Description 200V N-Channel B-FET / Substitute of IRF650A
200V N-Channel MOSFET

File Size 895.80K  /  10 Page

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    FQA47P06

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FQA47P06
OCR Text ...) VDD = -30 V, ID = -23.5 A, RG = 25 (Note 4, 5) -------- 50 450 100 195 84 18 44 110 910 210 400 110 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous...
Description Hard Case Pro LED Swivel-Head Flashlight; Battery Size Code:AA; Number of Batteries:4; Batteries Included:Yes; Series:TuF; Color:Black & Dark Gray
60V P-Channel MOSFET

File Size 716.41K  /  8 Page

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For rg-195 u Found Datasheets File :: 657    Search Time::1.641ms    
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