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ST Microelectronics
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Part No. |
STRH100N10FSY302 STRH100N10FSY301
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OCR Text |
...e 2. absolute maximum ratings (pre-irradiation) symbol parameter value unit v ds (1) 1. this rating is guaranteed @ t j 25 c (see ...power mosfets is extremely resistant to radiative environments. every manufacturing lot is tested f... |
Description |
48 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3
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File Size |
398.85K /
17 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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Part No. |
STRH100N10FSY3
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OCR Text |
... . . . . . . . . . . . . 4 2.1 pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...power mosf ets are tested to verify the radiation capability. the technology is extremely resista... |
Description |
72 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA HERMETIC SEALED PACKAGE-3
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File Size |
213.69K /
13 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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Part No. |
STRH100N6FSY3 STRH100N6FSY1
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OCR Text |
... . . . . . . . . . . . . 4 2.1 pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...power mosf ets are tested to verify the radiation capability. the technology is extremely resista... |
Description |
80 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA HERMETIC SEALED PACKAGE-3
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File Size |
212.20K /
13 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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