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  power-mesfet Datasheet PDF File

For power-mesfet Found Datasheets File :: 1374    Search Time::5.047ms    
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    HMC258

Hittite Microwave Corpo...
Hittite Microwave Corporation
Part No. HMC258
OCR Text ... All values in dBc below the IF power level 5 - 40 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at ...
Description    GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 14 - 21 GHz
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER/ 14 - 21 GHz

File Size 198.60K  /  6 Page

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    HMC259

美国讯泰微波有限公司上海代表
Hittite Microwave Corporation
Part No. HMC259
OCR Text ... dBm All values in dBc below IF power level 30 32 34 36 38 40 RF FREQUENCY (GHz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 4 - 114 y2 k ...
Description GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 28 - 40 GHz

File Size 164.56K  /  6 Page

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    NE76000 NE76000L

NEC Corp.
NEC[NEC]
Part No. NE76000 NE76000L
OCR Text ...mA, f = 4 GHz f = 12 GHz Output Power at 1 dB Compression, VDS = 3 V, IDS = 30 mA, f = 12 GHz Saturated Drain Current at VDS = 3 V, VGS = 0 Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA Transconductance, VDS = 3 V, IDS = 10 mA Gate to Source...
Description LOW NOISE L TO Ku BAND GaAs MESFET

File Size 51.86K  /  6 Page

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    RF2705 RF2705PCBA-41X

RF Micro Devices
Part No. RF2705 RF2705PCBA-41X
OCR Text ... LO generation options. Dynamic power control is supported through a single analog input giving 90dB of power control range for the W-CDMA m...MESFET Si CMOS SiGe Bi-CMOS Features * W-CDMA High/Mid/Low Power Modes * Quad-Band Direct Quadrat...
Description LOW NOISE, MULTI-MODE, QUAD-BAND, QUADRATURE MODULATOR AND PA DRIVER

File Size 375.67K  /  24 Page

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    RF2713

RFMD[RF Micro Devices]
Part No. RF2713
OCR Text ...operates from a single 3V to 6V power supply. Optimum Technology Matching(R) Applied 0.157 0.150 0.018 0.014 0.008 0.004 5 MODULATO...MESFET Si CMOS Features * 3V to 6V Operation * Modulation or Demodulation * IF From 100kHz to 25...
Description QUADRATURE MODULATOR/DEMODULATOR

File Size 134.65K  /  12 Page

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    SW-393 SW-393PIN SW-393TR

Fairchild Semiconductor, Corp.
Tyco Electronics
Part No. SW-393 SW-393PIN SW-393TR
OCR Text ...deally suited for use where low power consumption and high isolation are required. Typical applications include PCS and GSM LO switching, sw...MESFET process. The process features full chip passivation for increased performance and reliability...
Description GaAs SPST High Isolation Terminated Switch 0.5 - 2.0 GHz 砷化镓聚苯乙烯高隔离开关终.5 - 2.0吉赫
From old datasheet system

File Size 51.44K  /  2 Page

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    SW-394 SW-394PIN SW-394TR

Tyco Electronics
Part No. SW-394 SW-394PIN SW-394TR
OCR Text ...deally suited for use where low power consumption and high isolation are required. Typical applications include transmit/ receive switching,...MESFET process. The process features full chip passivation for increased performance and reliability...
Description From old datasheet system
GaAs SPDT High Isolation Terminated Switch

File Size 37.79K  /  2 Page

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    HITTITE[Hittite Microwave Corporation]
Part No. HMC344LP3
OCR Text ..."On State" Return Loss Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power = +7 dBm Each Tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) "Off State" 14 - 188 ...
Description GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz

File Size 217.08K  /  6 Page

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    Duracell
NEC Corp.
NEC[NEC]
Part No. NE722S01 NE722S01-T NE722S01-T1B1 NE722S01-T1
OCR Text POWER GAIN: GS = 6 dB TYP at f = 12 GHz * OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz * LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP...MESFET suitable for both amplifier and oscillator applications through X-band. The device features a...
Description NECs C TO X BAND N-CHANNEL GaAs MES FET

File Size 126.38K  /  6 Page

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    RF2442

RF Micro Devices, Inc.
RFMD[RF Micro Devices]
Part No. RF2442
OCR Text ... units where low transmit noise power is a concern. The device supports trade-offs between linearity and current drain. The designer has con...MESFET Si CMOS Features * Low Noise and High Intercept Point * External Bias Control * Single 2....
Description HIGH-LINEARITY LOW NOISE AMPLIFIER

File Size 174.83K  /  10 Page

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For power-mesfet Found Datasheets File :: 1374    Search Time::5.047ms    
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