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microwave pulse power silicon Datasheet PDF File

For microwave pulse power silicon Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	LLE18100X
Description	NPN silicon planar epitaxial microwave power transistor
File Size	55.90K / 9 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	MP6901
Description	4 A, 80 V, 6 CHANNEL, NPN AND PNP, Si, power TRANSISTOR power Transistor Module silicon Epitaxial Type (Darlington power transistor 6 in 1) High power Switching Applications. Hammer Drive, pulse Motor Drive and Inductive Load Switching. High power Switching Applications. Hammer Drive, pulse Motor Drive and Inductive Load Switching High power Switching Applications / Hammer Drive
File Size	169.26K / 7 Page	View it Online	Download Datasheet

				Tyco Electronics MA-Com
Part No.	PHI214-0851 PH1214-0.85L
Description	Radar pulsed power Transistor, 0.85W, 2ms pulse, 20% Duty 1.2 - 1.4 GHz 1200-1400 MHz,0.85 W, 2 ms pulse,radar pulsed power transistor
File Size	132.63K / 2 Page	View it Online	Download Datasheet

				MA-Com M/A-COM / Tyco Electronics
Part No.	PH1214-25S
Description	1200-1400 MHz,25 W, 1 ms pulse,radar pulsed power transistor Radar pulsed power Transistor, 25W, lus pulse, 10% Duty 1.2-1.4 GHz
File Size	137.74K / 2 Page	View it Online	Download Datasheet

				Tyco Electronics MA-Com
Part No.	PHI214-20EL PH1214-20EL
Description	Radar pulsed power Transistor, 2OW, 2ms pulse, 10% Duty 1.2 - 1.4 GHz 1200-1400 MHz,20 W, 2 ms pulse,radar pulsed power transistor
File Size	132.11K / 2 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	MP4514
Description	power Transistor Module silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High power Switching Applications. Hammer Drive, pulse Motor Drive and Inductive Load Switching.
File Size	130.57K / 5 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	MP4020
Description	power Transistor Module silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High power Switching Applications. Hammer Drive, pulse Motor Drive and Inductive Load Switching.
File Size	128.02K / 5 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	MP4303
Description	power Transistor Module silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High power Switching Applications. Hammer Drive, pulse Motor Drive and Inductive Load Switching.
File Size	135.80K / 6 Page	View it Online	Download Datasheet

				Pan Jit International Inc. Pan Jit International I...
Part No.	1.5SMC160 1.5SMC7.5 1.5SMC9.1 1.5SMC130 1.5SMC130A 1.5SMC110 1.5SMC180 1.5SMC170 1.5SMC170A 1.5SMC200 1.5SMC220A 1.5SMC62A 1.5SMC120 1.5SMC8.2 1.5SMC10 1.5SMC100 1.5SMC91A 1.5SMC30 1.5SMC180A 1.5SMC250 1.5SMC250A 1.5SMC8.2A 1.5SMC9.1A 1.5SMC150A 1.5SMC6.8A 1.5SMC47A 1.5SMC100A 1.5SMC160A 1.5SMC120A 1.5SMC200A 1.5SMC51 1.5SMC24A 1.5SMC33A 1.5SMC56
Description	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR PEAK pulse power 1500 W, UNIDIRECTIONAL, silicon, TVS DIODE, DO-214AB
File Size	135.24K / 5 Page	View it Online	Download Datasheet

				MDE Semiconductor
Part No.	30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A 30KW120 30KW120A 30KW198 30KW198A 30KW216A 30KW270 30KW156 30KW156A 30KW132A 30KW144A 30KW288 30KW288A 30KW102A
Description	258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
File Size	163.67K / 4 Page	View it Online	Download Datasheet

For microwave pulse power silicon Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |

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