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mhz-400 Datasheet PDF File

For mhz-400 Found Datasheets File :: 74535 Search Time::5.156ms
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				SIEMENS[Siemens Semiconductor Group]
Part No.	TDA5930-5 TDA5930 Q67000-A5135
OCR Text	... 13.5 13.5 70 100 75 V V C MHz MHz All voltage values are referenced to ground pin 3, 15, if not stated otherwise. The currents are ...400 kHz with detuning f = + 400 kHz R11 R12 F 80 100 115 150 5 150 200 7 dB V1/1...
Description	From old datasheet system Video IF Amplifier and Demodulator
File Size	480.02K / 18 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc Freescale Semiconductor...
Part No.	MRFE6VP6300HR311 MRFE6VP6300HSR3
OCR Text	...tilization, between 1.8 and 600 mhz. ? typical performance: v dd =50volts,i dq = 100 ma signal type p out (w) f (mhz) g ps (db) d (%) irl (...400 v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle 20 100 200 250 300...
Description	RF Power Field Effect Transistors
File Size	989.78K / 15 Page	View it Online	Download Datasheet

				Caliber Electronics Inc. ETC List of Unclassifed Manufacturers http:// List of Unclassifed Man...
Part No.	LSW-0805-18NK-B LSW-0805-3N0M-B LSW-0805-3N0M-T LSW-0805-5N6F-B LSW-0805-5N6F-T LSW-0805-15NM-B LSW-0805-15NM-T LSW-0805-91NJ-B LSW-0805-91NJ-T LSW-0805-27NK-B LSW-0805-8N2M-B LSW-0805-8N2M-T LSW-0805-R47M-B LSW-0805-2N8K-B LSW-0805-6N8K-B LSW-0805-18NK-T LSW-0805-3N3J-B LSW-0805-3N3J-T LSW-0805-10NK-T LSW-0805-2N8F-B LSW-0805-6N8F-B LSW-0805-2N8F-T LSW-0805-6N8F-T LSW-0805-8N2K-B LSW-0805-39NK-B LSW-0805-39NK-T LSW-0805-3N3M-B LSW-0805-3N3M-T LSW-0805-5N6K-B LSW-0805-5N6K-T LSW-0805-36NF-B LSW-0805-36NF-T LSW-0805-15NF-B LSW-0805-15NF-T LSW-0805-10NM-B LSW-0805-10NM-T LSW-0805-18NM-B LSW-0805-68NM-B LSW-0805-R15K-B LSW-0805-12NM-B LSW-0805-12NM-T LSW-0805-36NJ-B LSW-0805-36NJ-T LSW-0805-36NK-B LSW-0805-56NK-B LSW-0805-33NF-B LSW-0805-24NG-B LSW-0805-24NG-T LSW-0805-6N8J-B LSW-0805-6N8J-T LSW-0805-R15J-B LSW-0805-R10K-B LSW-0805-R82M-B LSW-0805-22NF-B LSW-0805-22NF-T LSW-0805-R24M-B LSW-0805-R47J-B LSW-0805-12NG-B LSW-0805-22NG-B LSW-0805-82NG-B LSW-0805-12NG-T LSW-0805-22NG-T LSW-0805-91NM-B LSW-0805-91NM-T LSW-0805-R24J-B LSW-0805-22NM-B LSW-0805-82NM-B LSW-0805-27NF-B LSW-0805-27NF-T LSW-0805-91NF-B LSW-0805-91NF-T LSW-0805-24NF-B LSW-0805-24NF-T LSW-0805-22NK-B LSW-0805-22NK-T
OCR Text	...470 560 680 820 L Test Freq (MHz) 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 200 200 200 200 150 150 150 150 15...400 400 400 400 400 400 400 400 350 350 310 290 250 230 190 180 Rev. 03/01 Specifications subjec...
Description	Wound Chip Inductor
File Size	23.94K / 1 Page	View it Online	Download Datasheet

				GeneSiC Semiconductor, Inc.
Part No.	GB02SLT12-252
OCR Text	...apacitance c v r = 1 v, f = 1 mhz, t j = 25 c 131 pf v r = 400 v, f = 1 mhz, t j = 25 c 12 v r = 1000 v, f = 1 mhz, t j = 25 c 8 thermal characteristics thermal resistance, junction - case r thjc 2.3 c/w me...
Description	Silicon Carbide Power Schottky Diode
File Size	401.83K / 5 Page	View it Online	Download Datasheet

				GeneSiC Semiconductor, Inc.
Part No.	GB02SLT12-220
OCR Text	...apacitance c v r = 1 v, f = 1 mhz, t j = 25 c 131 pf v r = 400 v, f = 1 mhz, t j = 25 c 12 v r = 1000 v, f = 1 mhz, t j = 25 c 8 thermal characteristics thermal resistance, junction - case r thjc 2.3 c/w me...
Description	Silicon Carbide Power Schottky Diode
File Size	394.54K / 5 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	TDA1596
OCR Text	...s restricted to approximately 1 MHz by an internal low-pass filter. THD compensation This circuit compensates non-linearities introduced by ...400 3.45 - V R9-10 C9-10 25 - 40 6 55 - k pF VP = V1 I1 7.5 - 8.5 20 12.0 26 V mA SYMBOL MIN. TYP. ...
Description	IF amplifier/demodulator for FM radio receivers
File Size	345.56K / 20 Page	View it Online	Download Datasheet

				GeneSiC Semiconductor, Inc.
Part No.	GB01SLT12-220
OCR Text	...apacitance c v r = 1 v, f = 1 mhz, t j = 25 c 69 pf v r = 400 v, f = 1 mhz, t j = 25 c 10 v r = 1000 v, f = 1 mhz, t j = 25 c 8 thermal characteristics thermal resistance, junction - case r thjc 3.6 c/w mecha...
Description	Silicon Carbide Power Schottky Diode
File Size	383.46K / 5 Page	View it Online	Download Datasheet

				GeneSiC Semiconductor, Inc.
Part No.	GB01SLT12-214
OCR Text	...apacitance c v r = 1 v, f = 1 mhz, t j = 25 c 69 pf v r = 400 v, f = 1 mhz, t j = 25 c 10 v r = 1000 v, f = 1 mhz, t j = 25 c 8 thermal characteristics thermal resistance, junction - case r thjc 3.6 c/w ...
Description	Silicon Carbide Power Schottky Diode
File Size	406.73K / 5 Page	View it Online	Download Datasheet

				Freescale Semiconductor
Part No.	MRFE6VP6300HR3
OCR Text	...tilization, between 1.8 and 600 mhz. ? typical performance: v dd =50volts,i dq = 100 ma signal type p out (w) f (mhz) g ps (db) d (%) irl (...400 v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle 20 100 200 250 300...
Description	RF Power Field Effect Transistors
File Size	1,061.26K / 15 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRFE6VP6300HSR3 MRFE6VP6300HR3
OCR Text	...frequencies between 1.8 and 600 mhz. these devices are suitable for use in high vswr industrial, broadcast and aerospace applications. ? typ...400 v dd =50vdc,i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle 20 100 200 250 300...
Description	RF Power Field Effect Transistors
File Size	982.82K / 14 Page	View it Online	Download Datasheet

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