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NXP Semiconductors N.V.
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| Part No. |
BLM6G10-30 BLM6G10-30G
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| OCR Text |
...tions: v ds =32v; i dq1 = 105 ma; i dq2 = 288 ma; p l = 30 w (cw). 8.2 impedance information [1] device input impedance as measured from gate to ground. [2] test circuit impedance as measured from drain to ground. table 6. characteri... |
| Description |
W-CDMA 860 MHz to 960 MHz power MMIC BLM6G10-30G<SOT822-1 (HSOP16)|<<http://www.nxp.com/packages/SOT822-1.html<1<,;BLM6G10-30G<SOT822-1 (HSOP16)|<<http://www.nxp.com/packages/SOT822-1.html<1<,;
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| File Size |
495.85K /
15 Page |
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Westcode Semiconductor
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| Part No. |
N880CH24-30
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| OCR Text |
...a) (a) (a) (a 2 s) (a / mm s) (ma) (v) (ma) (ma) (k/w) (k/w) (v) (m ww ) (v) / (a) (g) (kn) n086ch12-16 n n0194wc120-160 1200-1600 194 392...30 x 10 6 300/150 300/3 100 1000 0.022 0.027 1.100 0.574 2.15 / 1830 510 19.0 - 26.0 n570ch30-36 n n... |
| Description |
2400-3000 Phase Control Thyristor
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| File Size |
96.11K /
2 Page |
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TE Connectivity, Ltd.
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| Part No. |
SYS32256LK-30 SYS32256ZK-30 SYS32256LKLI-30 SYS32256LKL-30 SYS32256LKI-30
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| OCR Text |
...in = v il /v cc -2.1v - - 1440 ma average supply current (35/45/55) i cc2 t cyc = 35ns, cs= v il , v in =v il /v cc -2.1v - - 1200 ma sta...30/35 issue 1.7 january 1999 3 low v cc data retention characteristics - l version only (t op =... |
| Description |
256K X 32 MULTI DEVICE SRAM MODULE, 30 ns, SMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 30 ns, ZMA64 PLASTIC, ZIP-64
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| File Size |
115.36K /
7 Page |
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