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  ism-b Datasheet PDF File

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    IRFL110

IRF[International Rectifier]
Part No. IRFL110
OCR Text ...atings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Bod...B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4 TOP B O TT O M www.irf.com 7...
Description Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)

File Size 241.54K  /  8 Page

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    IRFP27N60K

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP27N60K
OCR Text ...ode Characteristics Symbol IS ISM VSD trr Q rr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body...B R )D SS IAS Fig 12d. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. ...
Description Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rdson)典\u003d 180mohm,身份证\u003d 27A条)
Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)

File Size 89.84K  /  8 Page

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    IRFP450B

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFP450B
OCR Text ...ristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forw...B, November 2001 IRFP450B Typical Characteristics 10 1 ID, Drain Current [A] ID, D...
Description 500V N-Channel MOSFET

File Size 705.34K  /  8 Page

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    IRFS450B IRFS450 FS450 EA0450M

FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
Part No. IRFS450B IRFS450 FS450 EA0450M
OCR Text ...ristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forw...B, November 2001 IRFS450B Typical Characteristics 10 1 ID, Drain Current [A] ID, D...
Description Discrete MOSFETs
500V N-Channel MOSFET

File Size 685.08K  /  8 Page

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    IRFS630A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFS630A
OCR Text ... and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse...b) support or sustain life, or (c) whose support device or system, or to affect its safety or failur...
Description Advanced Power MOSFET

File Size 259.74K  /  7 Page

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    IRLL014N IRLL014NTR

IRF[International Rectifier]
Part No. IRLL014N IRLL014NTR
OCR Text ...atings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode...B Y R D S (o n) I D , D rain Current (A ) 10 10 10 s TJ = 1 50 C TJ = 2 5C 1 1 00...
Description Advanced Process Technology
HEXFET Power MOSFET

File Size 154.63K  /  9 Page

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    IRLMS2002 IRLMS2002TR

International Rectifier
Part No. IRLMS2002 IRLMS2002TR
OCR Text ...atings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) D...B S D G 6X 0.65 (.025 ) 0 -10 1.30 (.051 ) 0.90 (.036 ) -C0.15 (.006 ) MAX. 1.45 (.057 ) 0....
Description Ultra Low On-Resistance
20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package

File Size 92.32K  /  8 Page

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    MMBF0201 MMBF0201N

MOTOROLA[Motorola, Inc]
Part No. MMBF0201 MMBF0201N
OCR Text ...rating junction temperature. IS ISM VSD -- -- -- -- -- 0.85 0.3 0.75 -- V A (VDD = 15 Vdc, ID = 300 mAdc, RL = 50 ) td(on) tr td(off) tf QT ...B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701...
Description N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

File Size 178.83K  /  6 Page

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    MMBF0202PLT1 MMBF0202PL ON2091

MOTOROLA[Motorola, Inc]
Part No. MMBF0202PLT1 MMBF0202PL ON2091
OCR Text ...rating junction temperature. IS ISM VSD -- -- -- -- -- 1.5 0.3 0.75 -- V A 2 Motorola Small-Signal Transistors, FETs and Diodes Device...B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701...
Description From old datasheet system
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

File Size 190.27K  /  6 Page

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    Q67000-S127 BSP318S

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q67000-S127 BSP318S
OCR Text ...ct current,pulsed TA = 25 C ISM V SD - 10.4 V Inverse diode forward voltage V GS = 0 V, IF = 5.2 A trr 0.95 1.2 ns...b Ptot = 2W g jhf e i d l k VGS [V] a 2.5 b c d e f g h i j k 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6...
Description SIPMOS Small-Signal Transistor(N channel Enhancement mode Logic Level Avalanche rated) SIPMOS小信号晶体管(N通道增强模式的逻辑电平雪崩额定
SIPMOS ? Small-Signal Transistor
From old datasheet system

File Size 128.08K  /  8 Page

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