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For ids Found Datasheets File :: 4913 Search Time::0.969ms
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				Polyfet RF Devices
Part No.	SC721
OCR Text	...hm Amp pF pF pF TEST CONDITIONS ids = 20.00 mA, Vgs = 0V Vds = 12.5 V, Vgs = 0V Vds = 0V Vgs = 30V ids = 0.10 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, ids = 3.50 A Vgs = 20V, Vds = 10V Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, ...
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
File Size	35.54K / 2 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	EGN35A180IV
OCR Text	...Gain Thermal Resistance VDS=50V ids=72mA IGS=- 36mA VDS=50V ids(DC)=1000mA f=3.5GHz Channel to Case TBD -1.0 TBD Limit Typ. Max. -2.0 -350 53.0 50 12.0 0.65 -3.5 0.8 Unit V V dBm % dB oC/W Edition 1.2 Dec. 2005 1 ES/EGN3...
Description	High Voltage - High Power GaN-HEMT
File Size	103.92K / 4 Page	View it Online	Download Datasheet

				RFHIC
Part No.	HM2060-10A
OCR Text	...- drain efficiency % - 25 - ids a - 1.4 - supply voltage v -3.0 -2 gate bias ( vgs1 and vgs2 ) v - 32 - main bias(vds) caution the drain voltage must be supplied to the device after the gate voltage is supplied turn ...
Description	GaN Hybrid Power Amplifier
File Size	247.76K / 7 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LPV3000 LP3000
OCR Text	...pression f = 18 GHz VDS = 8.0V, ids = 50% idsS (LP. LPV) Power Gain at 1dB Gain Compression f = 18 GHz VDS = 8.0V, ids = 50% idsS (LP) f = 18 GHz VDS = 8.0V, ids = 50% idsS (LPV) Power-Added Efficiency (typ. for Class A operation) Maximum D...
Description	2W Power PHEMT
File Size	46.89K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFC45V4450A C454450A
OCR Text	...TICS P1dB,GLP vs. f 47 VDS=10V ids=8A P1dB Po, P.A.E. vs. Pin 20 50 VDS=10V ids=8A f=4.7GHz Po 40 100 OUTPUT POWER P1dB (dBm) LINEAR POWER GAIN GLP (dB) 45 16 60 44 14 35 43 GLP 12 add 40...
Description	4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system
File Size	139.72K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	MGFS45V2527
OCR Text	... P1dB,GLP vs. f 46 VDS=10(V) ids=6.5(A) Po, add vs. Pin 16 50 Pout 45 15 40 VDS=10 (V) ids=6.5(A) f=2.6 (GHz) 70 P1dB 60 45 50 44 GLP 14 35 40 43 13 30 add 25 30 20 42 12 20 10 41 2.45 ...
Description	2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应 2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
File Size	30.81K / 2 Page	View it Online	Download Datasheet

				Polyfet RF Devices
Part No.	SK70214
OCR Text	...ate voltage relative 0.80 40.00 ids = ma, vgs = 0v v, vgs = 0v ciss crss coss vds = idq = a, vds = v, f = 0.80 bvdss idss drain breakdown voltage v ma pf pf pf common source output capacitance common source feedback capacita...
Description	RF POWER VDMOS TRANSISTOR
File Size	53.13K / 2 Page	View it Online	Download Datasheet

				CIRRUS[Cirrus Logic]
Part No.	EP7309-IV-C EP7309 EP7309-CB-C EP7309-CR-C EP7309-CV-C EP7309-EB-C EP7309-ER-C EP7309-EV-C EP7309-IB-C EP7309-IR-C
OCR Text	...of on-chip SRAM I MaverickKeyTM ids -- 32-bit unique ID can be used for SDMI compliance -- 128-bit random ID I LCD controller -- Interfaces directly to a single-scan panel monochrome STN LCD -- Interfaces to a single-scan panel color STN LC...
Description	HIGH PERFORMANCE LOW POWER SYSTEM ON CHIP ENHANCED DIGITAL AUDIO INTERFACE
File Size	1,268.35K / 46 Page	View it Online	Download Datasheet

				Polyfet RF Devices
Part No.	SP221
OCR Text	...ate voltage relative 0.20 10.00 ids = ma, vgs = 0v v, vgs = 0v ciss crss coss vds = idq = a, vds = v, f = 0.20 bvdss idss drain breakdown voltage v ma pf pf pf common source output capacitance common source feedback capacita...
Description	RF POWER VDMOS TRANSISTOR
File Size	50.49K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	VUM24-05 VUM2405 VUM24-05N
OCR Text	...TVJ = 25C TVJ = 25C VDS = 15 V, ids = 24 A, ids = 12 A VGS = 0 V 5 500 2 0.12 1.5 30 1.5 100 220 8.5 0.9 0.3 350 TVJ= 45C mA W W S V ns ns nF nF nF 100 50 0 0.001 TVJ= 125C MOSFET 0.01 t 0.1 s 1 VDS = 250 V, ids ...
Description	Power Factor Correction Modules: MOSFET Power MOSFET Stage for Boost Converters
File Size	99.88K / 4 Page	View it Online	Download Datasheet

For ids Found Datasheets File :: 4913 Search Time::0.969ms
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