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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F410CK1 KMM366F400CK1
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| OCR Text |
... range speed t rac t cac t rc t hpc -5 50ns 13ns 90ns 25ns -6 60ns 15ns 110ns 30ns
dram module kmm366f410ck1 kmm366f400ck1 functional block diagram v cc vss .1 or .22uf capacitor under each dram to all drams ras0 w0 oe0 a1-a11(a10) cas0 c... |
| Description |
4M x 64 DRAM DIMM(4M x 64 动RAM模块)
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| File Size |
384.74K /
20 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F203CK KMM366F213CK
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| OCR Text |
... range speed t rac t cac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns ? part identification - kmm366f203ck (4096 cycles/64ms ref. soj) - kmm366f213ck (2048 cycles/32ms ref. soj) ? new jedec standard proposal witho... |
| Description |
2M x 64 DRAM DIMM(2M x 64 动RAM模块)
2M x 64 DRAM DIMM(2M x 64 ?ㄦ?RAM妯″?)
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| File Size |
408.83K /
20 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F1600BK3 KMM366F1680BK3
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| OCR Text |
... range speed t rac t cac t rc t hpc -5 50ns 13ns 90ns 25ns -6 60ns 15ns 110ns 30ns
dram module kmm366f160(8)0bk3 rev. 0.0 (nov. 1997) - 4 - functional block diagram v cc vss .1 or .22uf capacitor under each dram to all drams ras0 w0 oe0 a... |
| Description |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
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| File Size |
444.05K /
21 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366F1600BK2 KMM366F1680BK2
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| OCR Text |
... range speed t rac t cac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns
dram module kmm366f160(8)0bk2 functional block diagram v cc vss 0.1 or 0.22uf capacitor under each dram to all drams ras0 w0 oe0 a0-a11(a12) cas0 cas1 cas2... |
| Description |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
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| File Size |
425.18K /
20 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM5368005BSW
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| OCR Text |
... range speed t rac t cac t rc t hpc -5 50ns 13ns 84ns 20ns -6 60ns 15ns 104ns 25ns pin names pin name function a0 - a11 address inputs dq0 - 35 data in/out w read/write enable ras0 - ras3 row address strobe cas0 - cas3 column address st... |
| Description |
8M x 36 DRAM SIMM(8M x 36 动RAM模块)
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| File Size |
393.31K /
19 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM44C1005D
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| OCR Text |
...ange speed t rac t cac t rc t hpc -5 50ns 15ns 84ns 20ns -6 60ns 15ns 104ns 25ns -7 70ns 20ns 124ns 30ns ? active power dissipation speed active power dissipation -5 4... |
| Description |
1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOSCAS 动态RAM(带扩展数据输)
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| File Size |
394.90K /
21 Page |
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it Online |
Download Datasheet |
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IBM Microeletronics
International Business Machines, Corp.
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| Part No. |
IBM11D8325B IBM11D4325B
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| OCR Text |
...s t rc cycle time 104ns 124ns t hpc edo mode cycle time 25ns 30ns card outline 1 36 37 72 ibm11d8320b8m x 3211/11, 5.0v, sn/pb. ibm11e8320b8m x 3211/11, 5.0v, au. discontinuted (9/98 - last order; 3/99 last ship)
?ibm corporation. al... |
| Description |
8M x 32 DRAM Module(8M x 32 动态RAM模块)
4M x 32 DRAM Module(4M x 32 动态RAM模块) 4米32内存米32动态内存模块）
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| File Size |
250.63K /
21 Page |
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it Online |
Download Datasheet |
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