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  field effect rectifier Datasheet PDF File

For field effect rectifier Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    TPCS8205 TPC8205

TOSHIBA[Toshiba Semiconductor]
Part No. TPCS8205 TPC8205
Description field effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA field effect Transistor Silicon N Channel MOS Type (U-MOS II)

File Size 288.86K  /  7 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. 2SK2613
Description field effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
TOSHIBA field effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)

File Size 220.85K  /  6 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. TPCS8201
Description field effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA field effect Transistor Silicon N Channel MOS Type (U-MOS )

File Size 302.11K  /  7 Page

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    AD22151G AD22151YRZ-RL AD22151YR-REEL

Analog Devices, Inc.
Part No. AD22151G AD22151YRZ-RL AD22151YR-REEL
Description Linear Output Magnetic field Sensor
MAGNETIC field SENSOR-HALL effect, -60-60mT, 0.45-5.40V, RECTANGULAR, SURFACE MOUNT MS-012AA, SOIC-8
Linear Output Magnetic field Transducer

File Size 195.15K  /  8 Page

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    IRFF110 IRFF111 IRFF112 IRFF113

General Electric Solid State
GE Solid State
Part No. IRFF110 IRFF111 IRFF112 IRFF113
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS field-effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.

File Size 173.01K  /  5 Page

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    MTD3055VL MTD3055VLNL

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. MTD3055VL MTD3055VLNL
Description N-Channel Logic Level Enhancement Mode field effect Transistor 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
From old datasheet system
M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE field effect TRANSISTOR

File Size 174.41K  /  3 Page

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    ATS177-PL-B-A ATS177-P ATS177-PL-B-B ATS177-PL-A-A ATS177-PL-A-B ATS177

Diodes, Inc.
Diodes Inc.
DIODES[Diodes Incorporated]
Part No. ATS177-PL-B-A ATS177-P ATS177-PL-B-B ATS177-PL-A-A ATS177-PL-A-B ATS177
Description SINGLE OUTPUT HALL effect LATCH MAGNETIC field SENSOR-HALL effect, -10-10mT, 700mV, RECTANGULAR, THROUGH HOLE MOUNT
SINGLE OUTPUT HALL effect LATCH 单输出霍尔效应锁

File Size 141.57K  /  8 Page

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    AH175-WL-B-A AH175-WL-B-B AH175-PL-B-A AH175-PL-B-B AH175-PG-B-A AH175-PG-B-B AH175-WL-A-B AH175 AH175-PG-7-A AH175-PG-7

Diodes, Inc.
磁阻传感
DIODES[Diodes Incorporated]
Diodes Inc.
Part No. AH175-WL-B-A AH175-WL-B-B AH175-PL-B-A AH175-PL-B-B AH175-PG-B-A AH175-PG-B-B AH175-WL-A-B AH175 AH175-PG-7-A AH175-PG-7-B AH175-PG-A-A AH175-PG-A-B AH175-PL-7-A AH175-PL-7-B AH175-PL-A-A AH175-PL-A-B AH175-WG-7-A AH175-WG-7-B AH175-WG-A-A AH175-WG-A-B AH175-WG-B-A AH175-WG-B-B AH175-WL-7-A AH175-WL-7-B AH175-WL-A-A DIODESINC.-AH175-WG-B-A
Description HALL effect LATCH FOR HIGH TEMPERATURE MAGNETIC field SENSOR-HALL effect, -6-6mT, 400mV, RECTANGULAR, THROUGH HOLE MOUNT
HALL effect LATCH FOR HIGH TEMPERATURE 霍尔效应锁存高温

File Size 110.91K  /  8 Page

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    Micronas Semiconductor Holding AG
Part No. HAL115SF-C HAL114SF-C HAL11X HAL115SF-K HAL114SF-K HAL114UA-K
Description Hall effect Sensor Family 霍尔效应传感器系
Hall effect Sensor Family MAGNETIC field SENSOR-HALL effect, -17-11mT, 0.13-0.28V, RECTANGULAR, SURFACE MOUNT

File Size 127.98K  /  17 Page

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    PTF10031

Ericsson Microelectronics
Part No. PTF10031
Description 50 Watts/ 1.0 GHz GOLDMOS field effect Transistor
50 Watts, 1.0 GHz GOLDMOS field effect Transistor 50瓦,1.0 GHzGOLDMOS场效应晶体管

File Size 214.70K  /  6 Page

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