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For ecovery Found Datasheets File :: 545    Search Time::1.593ms    
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    SUR860 SUR8100 SUR820

Sirectifier Semiconductors
Part No. SUR860 SUR8100 SUR820
OCR Text ...g. 1 f orward current f ig. 2 r ecovery charge vers us -di f /dt. f ig. 3 p eak revers e current vers us vers us voltage drop. -di f /dt. f ig. 4 dynamic parameters vers us f ig. 5 r ecovery time vers us -di f /dt. f ig. 6 p eak forward...
Description Ultra Fast Recovery Epitaxial Diodes

File Size 266.75K  /  3 Page

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    FDPF680N10T

Fairchild Semiconductor
Part No. FDPF680N10T
OCR Text ...se c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g s am e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l...
Description N-Channel PowerTrench? MOSFET 100V, 12A, 68mΩ

File Size 646.47K  /  8 Page

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    APT2X30DQ60J APT2X31DQ60J

Advanced Power Technology
Part No. APT2X30DQ60J APT2X31DQ60J
OCR Text ...y current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm...
Description MOSFET

File Size 121.86K  /  4 Page

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    PBMB200B12

Nihon Inter Electronics Corporation
Part No. PBMB200B12
OCR Text ...= 0v . . r g everse ecovery ime = 200a, = -10v i/t= 400a/s . . ? . . . . hermal mpedance iode th(j-c) junction to case . 80.0 15 62.0 23 8 7 67 5 4 6 6 14 1...
Description Full Bridge IGBT Module 200A/1200V

File Size 216.42K  /  3 Page

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    PBMB200E6

Nihon Inter Electronics Corporation
Part No. PBMB200E6
OCR Text ...= 0v . . r g everse ecovery ime = 200a, = -10v i/t= 400a/s . . ? . . . . hermal mpedance iode th(j-c) junction to case tc???y? . 80.0 15 62.0 23 8 7 67 5 4 ...
Description Full Bridge IGBT Module 200A/600V

File Size 313.47K  /  4 Page

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    Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
Part No. FDPF12N50UT
OCR Text ...se c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l ...
Description 10 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB ROHS COMPLIANT, TO-220F, 3 PIN

File Size 599.48K  /  9 Page

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    APT15DQ60BCT

Advanced Power Technology
Part No. APT15DQ60BCT
OCR Text ...y current . t rr - reverse r ecovery time, measured from zero crossing wher e diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i ...
Description MOSFET

File Size 121.45K  /  4 Page

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    APT15DQ60B APT15DQ60S

Advanced Power Technology
Part No. APT15DQ60B APT15DQ60S
OCR Text ...y current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm...
Description MOSFET

File Size 135.83K  /  4 Page

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    APT15DQ60K

Advanced Power Technology
Part No. APT15DQ60K
OCR Text ...y current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm...
Description MOSFET

File Size 128.29K  /  4 Page

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    APT2X101DQ60J APT2X100DQ60J

Advanced Power Technology
Part No. APT2X101DQ60J APT2X100DQ60J
OCR Text ...y current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm...
Description MOSFET

File Size 133.14K  /  4 Page

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For ecovery Found Datasheets File :: 545    Search Time::1.593ms    
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