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  7a 400v Datasheet PDF File

For 7a 400v Found Datasheets File :: 730    Search Time::0.875ms    
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    Infineon Technologies
Part No. SKP15N60
OCR Text ...E = 15 V T O - 22 0A B T O - 24 7a C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6...400v, VGE = 0/+15V, RG = 21) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,...
Description Fast IGBT in NPT-technology with soft / fast recovery anti-parallel EmCon diode

File Size 488.22K  /  14 Page

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    SKP15N60NBSP SKP15N60

Infineon Technologies AG
Part No. SKP15N60NBSP SKP15N60
OCR Text ...E = 15 V T O - 22 0A B T O - 24 7a C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 wit...400v, VGE = 0/+15V, RG = 21) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,...
Description SKP15N60, SKB15N60, SKW15N60 Fast S-IGBT in NPT-Technology
From old datasheet system

File Size 299.66K  /  14 Page

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    MJ13333

Inchange Semiconductor Company Limited
Part No. MJ13333
OCR Text ...tion voltage i c = 20a; i b =6.7a 5 v v be (sat) base-emitter saturation voltage i c = 10a; i b = 2a i c = 10a; i b = 2a,t c =100 1.8 1.8 v i cev collector cutoff current v cev =400v;v be (off) =1.5v v cev =400v;v be (...
Description isc Silicon NPN Power Transistor

File Size 106.61K  /  2 Page

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    Infineon Technologies Corporation
Part No. SGW10N60 SGB10N60
OCR Text ...E = 15 V T O - 22 0A B T O - 24 7a C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6...400v, VGE = 0/+15V, RG = 25) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,...
Description Fast S-igbt in Npt-technology

File Size 302.33K  /  12 Page

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    INFINEON[Infineon Technologies AG]
Part No. SKW30N60HS Q67040-S4503
OCR Text ... C =3 0 A V G E = 15 V T O - 24 7a C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C - 1500 203 92 141 13 220 pF nC nH A ...400v, VGE = 0/+15V, RG = 11) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,...
Description From old datasheet system
HIGH SPEED IGBT IN NPT-TECHNOLOGY

File Size 433.86K  /  14 Page

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    Q67040-A4463 SGW30N60 Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60

INFINEON[Infineon Technologies AG]
Part No. Q67040-A4463 SGW30N60 Q67040-S4237 Q67041-A4713 SGB30N60 SGP30N60
OCR Text ...E = 15 V T O - 22 0A B T O - 24 7a C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6...400v, VGE = 0/+15V, RG = 11) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,...
Description IGBTs & DuoPacks - 30A 600V TO247aC IGBT
IGBTs & DuoPacks - 30A 600V TO263AB SMD IGBT
Fast S-IGBT in NPT-Technology
Fast IGBT in NPT-technology
Heat Sink; Package/Case:TO-220; Thermal Resistance:16.7 C/W; Mounting Type:Through Hole; Length:29.97mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
Heat Sink; Package/Case:TO-220; Thermal Resistance:16.7 C/W; Mounting Type:Through Hole; Length:29.97mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:No RoHS Compliant: No

File Size 413.03K  /  12 Page

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    IRFIB7N50LPBF

International Rectifier
Part No. IRFIB7N50LPBF
OCR Text ...y (mJ) 2000 ID TOP 1.4A 1.7a BOTTOM 6.8A 1500 1000 500 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 14. Maximum Avalanche Energy vs. Drain Current 15V V(BR)DSS VDS L DRIVER tp RG...
Description SMPS MOSFET, HEXFET Power MOSFET

File Size 201.62K  /  9 Page

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    AOT42S60 AOB42S60

Alpha & Omega Semiconductors
Alpha & Omega Semiconductor...
Part No. AOT42S60 AOB42S60
OCR Text ...lse ratin g. g. l=60mh, i as =6.7a, v dd =150v, starting t j =25c h. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives...
Description 600V 37a a MOS Power Transistor

File Size 253.01K  /  6 Page

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    IRF[International Rectifier]
Part No. IRFIB5N50L
OCR Text ...FET(R) Power MOSFET 0.67 73ns 4.7a VDSS RDS(on) typ. Trr typ. ID 500V Features and Benefits * SuperFast body diode eliminates the nee...400v, VGS = 0V, TJ = 125C VGS = 30V VGS = -30V f = 1MHz, open drain Dynamic @ TJ = 25C (unless ot...
Description MOTOR Control Application

File Size 182.66K  /  9 Page

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    IRFBA22N50A IRFBA22N50

IRF[International Rectifier]
Part No. IRFBA22N50A IRFBA22N50
OCR Text ... D R IV E R 2000 ID 10.7a 15A BOTTOM 24A TOP RG 20V tp D .U .T IA S + V - DD 1500 A 0 .0 1 1000 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 500 0 25 50 75 100 125 150 Starting TJ , ...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)

File Size 104.61K  /  8 Page

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