| |
|
 |
Infineon Technologies AG
|
| Part No. |
IPD90P03P4L-04
|
| OCR Text |
...-25V, f =1MHz
-
8670 2350 65 17 11 140 40
11300 pF 3050 130 ns
Q gs Q gd Qg V plateau V DD=-24V, I D=-90A, V GS=0 to -10V
-
...04
1 Power dissipation P tot = f(T C); V GS -6V
2 Drain current I D = f(T C); V GS -6V
16... |
| Description |
90 A, 30 V, 0.0068 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 GREEN, PLASTIC PACKAGE-3
OptiMOS-P2 Power-Transistor
|
| File Size |
163.01K /
9 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
INFINEON[Infineon Technologies AG]
|
| Part No. |
SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04
|
| OCR Text |
...
4
50
2
0 25
45
65
85
105
125
145
C 185 Tj
0
0
20
40
60
80
nC
120
QGate
15 Drai...04
V
V (BR)DSS
34 33 32 31 30 29 28 27 -60
-20
20
60
100
140 C
200
Tj
... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Power-Transistor
|
| File Size |
417.49K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
VISHAY SEMICONDUCTORS
|
| Part No. |
BAS40-04-V-GS18
|
| OCR Text |
...orage temperature range t stg - 65 to + 150 c parameter test condition symbol min ty p. max unit reverse breakdown voltage i r = 10 a (pulsed) v (br) 40 v leakage current pulse test v r = 30 v , t p < 300 s i r 20 100 na forward volt... |
| Description |
0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
| File Size |
65.78K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Central Semiconductor
|
| Part No. |
CUD10-04 CUD10-06
|
| OCR Text |
...unction temperature t j ,t stg -65 to +150 c typical thermal resistance jc 3.0 c/w electrical characteristics: (t c =25c unless otherwise noted) cud10-02 cud10-04 cud10-06 symbol test conditions typ max typ max typ max units i r v r =rated... |
| Description |
SMD Ultra Fast Rectifier Single
|
| File Size |
134.96K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
